NVF3055L108T1G by onsemi

Overview of NVF3055L108T1G by onsemi

The NVF3055L108T1G is a single N-Channel logic level Power Field-Effect Transistors produced by onsemi. Designed for Automotive applications, this transistor operates as an enhancement-mode MOSFET with a drain-source voltage (Vds) of 60V and continuous drain current (Id) of 3A. The transistor showcases a low drain-source on-resistance of 120mΩ when tested at 5V, and a maximum gate-source threshold voltage of 1.68V. The NVF3055L108T1G is packaged in a small outline TO-261 (SOT-223) 4 lead format, supporting surface mount technology.

The robust component features an automotive qualification, indicating its suitability for high-reliability applications where vibration and thermal variance may be a concern. Notably, the part includes an avalanche energy rating (Eas) of 74 mJ and is capable of handling a pulsed drain current (IDM) up to 9A. Additionally, it is designed to handle a maximum operating temperature of 175 °C, underscoring its capability in high-temperature environments. With a power dissipation maximum of 2.1W, this transistor is ideal for power regulation roles within stringent operational standards.

Industry Applications for NVF3055L108T1G

The NVF3055L108T1G by onsemi offers versatile applications across various industries due to its high power efficiency, robust thermal performance, and automotive qualification. Below are potential industries where this unit could play an integral role:

  • Automotive: As an automotive-qualified part, the NVF3055L108T1G might be used in vehicle power management systems, electric vehicle (EV) controllers, and advanced driver-assistance systems (ADAS). These applications benefit from the part’s reliability in thermal extremes and mechanical robustness.
  • Consumer Electronics: In consumer electronics, this MOSFET could potentially be used in power supplies of high-performance gaming systems, where efficient heat dissipation and high current handling are necessary.
  • Industrial Automation: This transistor is suitable for use in industrial automation equipment including robotics and automated control systems, benefiting from its high endurance in harsh working conditions and efficient switching capabilities.
  • Telecommunications: The NVF3055L108T1G might be integrated into telecommunications infrastructure, particularly in power amplifiers and RF switching applications requiring high efficiency and reliability.

Note: Potential industry applications listed above are conceptual and should be further analyzed and verified by engineering teams according to industry standards and application-specific requirements.

About onsemi

onsemi, the manufacturer of NVF3055L108T1G, is a significant player in the semiconductor industry, known for their broad spectrum of energy-efficient solutions. Specifically, within the realm of Transistors and, more specifically, Power Field-Effect Transistors, onsemi has established a reputation for producing high-quality products that enhance performance across automotive, industrial, and consumer sectors. NVF3055L108T1G represents a key part of their offering, characterized by its robust design tailored for demanding environments, a trait reflective of onsemi’s commitment to reliability and performance in transistor technology.

Where to Find NVF3055L108T1G by onsemi

To purchase the NVF3055L108T1G, I recommend conducting a search on findchips.com. Here, you can confirm current stock levels, pricing, and availability across various distributors. Historically, this part has been available from distributors such as Digikey, Mouser Electronics, Avnet, and Future Electronics, but precise stock and pricing can be more accurately determined through the FindChips platform. Additionally, if you’re looking for alternate parts to NVF3055L108T1G, the same site offers comprehensive listings of Power Field-Effect Transistors provided by onsemi or other manufacturers.

Compare pricing for NVF3055L108T1G and other Power Field-Effect Transistors at findchips.com