Overview of BSZ150N10LS3GATMA1 by Infineon Technologies AG
The BSZ150N10LS3GATMA1 by Infineon Technologies AG is a metal-oxide semiconductor field-effect transistor (MOSFET) specified as an N-channel device with key parameters such as a drain-source voltage of 100V and continuous drain current of 40A. It comes in a PG-TSDSON-8 package, making it suitable for surface mounting. The device is notable for a maximum drain-source on-resistance of just 0.02 ohm, measured at a 10V test voltage. Being RoHS compliant, it adheres to environmental standards regarding hazardous substances.
The transistor operates in enhancement mode and boasts an impressive avalanche energy rating of 80 mJ, emphasizing its robust reliability in applications confronting high-energy pulses. Furthermore, designed to operate within an extended temperature range of -55°C to 150°C, it is well-suited for demanding environments. Its moisture sensitivity level at 1 indicates a high degree of resilience to humidity, essential for maintaining performance and reliability in various applications.
Industry Applications for BSZ150N10LS3GATMA1
The robust design and technical specifications of the BSZ150N10LS3GATMA1 make it potentially suitable for use in various high-demand industries. The following are illustrative applications across diverse sectors:
- Industrial Automation: High switching performance and reliability might suit the BSZ150N10LS3GATMA1 for motor control applications, power management systems, and other automation technologies that require effective energy control and heat management.
- Consumer Electronics: Given its capacity to handle significant power levels and its RoHS compliance, this MOSFET could possibly be found in power supplies for various consumer electronics where efficiency and compact size are valued, such as in laptops, gaming consoles, and home appliances.
- Automotive: The device’s endurance at high temperatures and robust performance possibly make it suitable for electric vehicles’ power management systems, helping in the electronic control units (ECUs) and battery management systems (BMS).
- Telecommunications: This component might also be a good match for power amplifiers and RF switches, crucial for base station use in telecommunications infrastructure where stable operation over a wide temperature range is a must.
Please note, these potential industry applications are illustrative and require careful analysis and verification by engineering teams to ensure the component meets specific application requirements and adheres to industry standards.
About Infineon Technologies AG
Infineon Technologies AG is a leading global provider in the semiconductor industry, particularly noted for its innovative advancements in Power Field-Effect Transistors. They offer a variety of MOSFETs, including the BSZ150N10LS3GATMA1, characterized by high efficiency, reliability, and performance under demanding conditions. Through consistent R&D efforts and emphasis on environmental sustainability, Infineon’s products cater to a wide range of high-tech applications across automotive, industrial, and consumer electronics sectors. Their products are designed not only to meet but often exceed, global environmental and operational standards, thereby ensuring their components are top choices for engineers and designers alike.
Where to Find BSZ150N10LS3GATMA1 by Infineon Technologies AG
To purchase the BSZ150N10LS3GATMA1, it is advisable to explore options on our online platform findchips.com. There, you can find real-time stock levels, pricing from various distributors, and compare options swiftly. Historically, distributors such as Mouser Electronics, Avnet Americas, DigiKey, and Newark have stocked this item. However, availability can fluctuate, and accessing the most up-to-date information through findchips.com will provide accurate data. Additionally, for alternatives to the BSZ150N10LS3GATMA1, you can look into other Power Field-Effect Transistors that might be offered by Infineon Technologies AG or other manufacturers.