Overview of MRFE6VS25NR1 by NXP Semiconductors
The MRFE6VS25NR1 is a Radio Frequency (RF) power metal-oxide semiconductor field-effect transistor (MOSFET), designed for high-efficiency RF applications. It features a drain-source voltage (Vds) of 133Vdc and a power dissipation capacity of 25W, making it suitable for handling significant levels of power in compact designs. The operating frequency range spans from 1.8 MHz to 2 GHz, which covers a wide spectrum from the lower end of the Medium Frequency (MF) band all the way to the very end of the Ultra High Frequency (UHF) band.
This part comes packaged in a TO-270 format, a plastic/epoxy body with a flanged mount, ideally suited for high-power applications where thermal dissipation and stability are crucial. Its physical configuration includes two pins structured in a dual terminal position and a singular N-channel configuration, optimized for enhancement mode operation. With operating temperatures ranging from -40°C to 150°C, the MRFE6VS25NR1 accommodates the challenging thermal environments often encountered in RF power transmission.
Key features include a minimum power gain of 24.5 dB and a continuous drain current specification not detailed, highlighting its capability to amplify weak RF signals to higher power levels efficiently. As of the current writing, the factory lead time for this part is noted at 10 weeks, suggesting planning for procurement should accommodate this manufacturing schedule.
Industry Applications for MRFE6VS25NR1
The MRFE6VS25NR1’s broad frequency range and high power handling make it a viable candidate for various applications within the realms of Consumer Electronics and Industrial Automation. Below are illustrative examples of potential uses within these industries, noting that these are conceptual and should be validated by engineering teams:
- In Consumer Electronics, the MRFE6VS25NR1 might be used in RF power amplifiers that are part of residential broadband systems and satellite dish transceivers, where its high bandwidth and power efficiency could potentially enhance signal strength and reliability.
- Within Industrial Automation, this component could be integrated into RF energy systems for industrial heating processes. Its ability to operate at high temperatures and handle significant power levels might make it suitable for applications requiring robust, long-term operation.
These potential industry applications are only conceptual and require rigorous analysis by design teams to ensure compliance with industry standards and specific operational prerequisites.
About NXP Semiconductors
NXP Semiconductors is a leading technology company in the semiconductor industry, particularly known for its innovative contributions to the field of RF Power Field-Effect Transistors. The company’s portfolio includes a variety of RF power transistors designed for diverse applications across automotive, industrial, and consumer markets. NXP prides itself on delivering high-performance and durable components like the MRFE6VS25NR1, among others, which are crafted to meet stringent performance criteria and reliability standards in challenging environmental conditions.
Where to Find MRFE6VS25NR1 by NXP Semiconductors
To purchase the MRFE6VS25NR1, prospective buyers should consider visiting findchips.com. The site not only lists NXP Semiconductors as a manufacturer but also offers visibility into the stock levels and pricing from various distributors. In the past, this part has been available through distributors such as EBV Elektronik, Avnet Americas, and Newark, among others. For the latest in purchasing options, directly exploring RF Power Field-Effect Transistors on findchips.com is recommended.