Overview of BSC026N04LSATMA1 by Infineon Technologies AG
The BSC026N04LSATMA1 is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) known for its efficiency in switching applications and power management. With a maximum drain current of 23A and an ability to handle pulsed drain currents up to 400A, this component demonstrates substantial electrical robustness. It operates at a drain-source voltage of 40V and boasts a particularly low on-resistance of 0.0036Ω, ensuring minimal power loss and higher efficiency in its applications.
Manufactured by Infineon Technologies AG, the BSC026N04LSATMA1 is packaged in a TDSON-8, 8-pin configuration that supports surface mount technology. This makes it ideal for compact designs where space is a premium. Notably, this MOSFET includes features such as a built-in diode and the capability to manage a significant avalanche energy rating of 50 mJ, which is crucial for applications requiring high power and reliability.
The transistor is RoHS compliant, but importantly, it is not compliant with the REACH regulation. The part is described as active in its life cycle, indicating continuous manufacturing and availability in the market.
Industry Applications for BSC026N04LSATMA1
This MOSFET could potentially be incorporated within various high-demand industries that require robust switching and power management solutions. Here are a few illustrative examples:
- Consumer Electronics: In applications such as laptop power supplies and smartphone charging systems, the BSC026N04LSATMA1 could provide essential support due to its high efficiency and low on-resistance, facilitating enhanced battery life and reduced heat generation.
- Automotive: Particularly with the trend toward electric vehicles, components that can handle high current with efficiency and reliability are crucial. Here, the BSC026N04LSATMA1 might be utilized in electric vehicle power management systems to control power distribution effectively.
- Industrial Automation: In automated machinery that requires precise power control for both safety and efficiency, the switching capabilities of this MOSFET could be extremely advantageous. Its high avalanche energy rating makes it suitable for applications that may experience unexpected voltage spikes.
- Aerospace and Defense: Power supplies in aerospace applications could potentially leverage this MOSFET’s ability to operate effectively under various conditions, complementing systems that demand reliable and consistent power management with minimal losses.
Please note that these potential industry applications are only conceptual/illustrative and require analysis and verification by engineering and design teams for adherence to industry standards and specific application requirements.
About Infineon Technologies AG
Infineon Technologies AG is a leading innovator in the electronics and semiconductor industry. A significant portion of their product line includes Power Field-Effect Transistors, among a broader range of Transistors. Infineon is known for producing high-reliability components that find applications across commercial, automotive, and industrial sectors. Their expertise in developing energy-efficient yet powerful solutions is visible in products such as BSC026N04LSATMA1, where superior electrical characterizes combine with practical, robust package designs.
Where to Find BSC026N04LSATMA1 by Infineon Technologies AG
To purchase BSC026N04LSATMA1, a thorough search on findchips.com is recommended. Here, not only can you verify current stock levels and pricing, but you can also compare it against other Power Field-Effect Transistors from Infineon Technologies AG or different manufacturers. Historically, distributors such as Win Source Electronics, EBV Elektronik, Mouser Electronics, and DigiKey have stocked this part. However, availability may vary, and staying updated via findchips.com will ensure you have the latest information.