Overview of BSZ065N03LSATMA1 by Infineon Technologies AG
The BSZ065N03LSATMA1 by Infineon Technologies AG is a N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET), designed for high efficiency and power density with a drain current (I(D)) of 12A, drain-source breakdown voltage of 30V, and drain-source on-resistance of just 0.0086Ω. Packaged in a compact, green, plastic TSDSON-8 form factor, this MOSFET is designed for high-performance switching applications with a feature of built-in diode and the capability for pulse drain current up to 160 A. With properties like a moisture sensitivity level of 1, and compliance with RoHS, the component represents a blend of robust performance and environmental consideration. Notably, its case connection is designated as DRAIN, supporting configurations that are streamlined for simplified design implementations.
In terms of assembly and manufacturing considerations, this part is surface-mountable, fitting well into modern, high-density circuit board designs. Operating on enhancement mode, the BSZ065N03LSATMA1 is versatile for various electronic schemes, bolstered by its switching application focus. The semiconductor’s resistance to high pulsing currents (IDM up to 160 A) and its avalanche energy rating (Eas) of 16 mJ further solidify its reliability in demanding conditions, though noting that it is recommended to keep in mind its 20 weeks factory lead time as of the current writing.
Industry Applications for BSZ065N03LSATMA1
The BSZ065N03LSATMA1’s attributes lend it to a broad array of potential industry applications. While the possible industry applications identified include Consumer Electronics, Energy and Power Systems, and Renewable Energy, its versatile features make it suitable for a wider range of use cases. Potential applications must be evaluated and verified by engineering and design teams for best fit. Some conceptual illustrations of these could include:
- Consumer Electronics: In power management solutions for devices such as laptops, smartphones, and tablets which demand efficient, high-density power switches to handle battery management and protection circuits.
- Energy and Power Systems: Leveraging the MOSFET for high-efficiency power supplies, DC/DC converters, or in the switch mode power supplies (SMPS) used in various telecommunications and industrial machinery, where energy efficiency and heat dissipation are critical.
- Renewable Energy Systems: The component could find use in photovoltaic (solar) inverters or wind turbine converters, facilitating efficient conversion of energy with its low on-resistance and high switching frequency capabilities.
- Automotive Electronics: Given its robustness denoted by its avalanche energy rating, it might also be applied in electric vehicles (EVs) and hybrid electric vehicles (HEVs) for managing power distribution or in the inverting circuits for driving the motor.
These applications, among others, underscore the versatility of the BSZ065N03LSATMA1, although the precise fit for any specific use case requires a detailed technical analysis.
About Infineon Technologies AG
Infineon Technologies AG stands as a leading figure in the semiconductor industry, with a significant footprint in the Power Field-Effect Transistors segment. The company is known for its enduring commitment to innovation, evidenced by a broad product portfolio that includes components key to advancing energy efficiency, mobility, and security in the digital age. Infineon’s BSZ065N03LSATMA1 is a testament to this commitment, incorporating leading-edge technology for optimal performance in power-switching applications. Infineon continuously develops a range of MOSFETs that serve a wide array of industry needs, optimizing for factors such as power density, efficiency, and reliability. These efforts make Infineon’s offerings integral to innovations across automotive, industrial, and consumer electronics sectors among others.
Where to Find BSZ065N03LSATMA1 by Infineon Technologies AG
To source the BSZ065N03LSATMA1 by Infineon Technologies AG, it is recommended to use reputable platforms like findchips.com which provide current stock levels and competitive pricing information. On Findchips, you will find a comprehensive selection of Power Field-Effect Transistors, including alternatives to BSZ065N03LSATMA1 offered by Infineon Technologies AG or other manufacturers. Historically, this part has been available from distributors such as Win Source Electronics, Perfect Parts Corporation, New Advantage Corporation, and EBV Elektronik among others. However, for the most up-to-date availability and pricing information, accessing findchips.com is highly recommended.