Overview of BSZ130N03MSGATMA1 by Infineon Technologies AG
The BSZ130N03MSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor designed for demanding applications that require high efficiency and reliability. This device is characterized by its 30V drain-source breakdown voltage and is capable of supporting a continuous drain current of up to 35A with an impressive low drain-source on resistance of 0.015 ohms. The transistor’s construction utilizes the metal-oxide semiconductor FET (MOSFET) technology, ensuring high performance and minimal power loss during operation.
Specific to the Infineon Technologies’ offering, this N-channel transistor is housed in a green, plastic, TSDSON-8 package, which stands out for its size efficiency and the thermal management it offers. It’s designed to support surges with a pulsed drain current maximum (IDM) of 140A, indicating its suitability for applications that experience short bursts of high power. Additionally, its operational mode is enhancement, which is typical for MOSFETs that require a positive gate-source voltage to conduct.
Its additional feature being avalanche rated indicates it can handle high energy pulses without failing, making it an especially robust component for power-switching applications. The specifications also highlight its suitability for surface-mount technology (SMT), supporting modern, compact, and high-density electronic board designs. Though it comes with a moisture sensitivity level of 1, indicating robustness against moisture during storage and handling, it is marked as not compliant with the REACH regulation. The device is, however, compliant with RoHS, making it suitable for use in environments where hazardous substances are regulated.
Infineon’s BSZ130N03MSGATMA1 is more than an ordinary transistor; its built-in diode for protection, avalanche energy rating, and low resistance make it a high-performance component for demanding electronic circuits.
Industry Applications for BSZ130N03MSGATMA1
The versatility of the BSZ130N03MSGATMA1 makes it suitable for a broad spectrum of industries. Although these potential applications are based on the characteristic attributes of the part, including its high current handling, low on-resistance, and the robustness given by its avalanche rating, engineering and design teams should conduct thorough analysis and verification to ensure compliance with industry standards and specific requirements. The following are conceptual illustrations of where the BSZ130N03MSGATMA1 might find utility:
- Energy and Power Systems: In power supply circuits as a switching component to ensure efficient energy transfer and conversion. Its high efficiency and thermal characteristics potentially suit it for power adapters, solar inverters, and UPS systems.
- Transportation and Logistics: Within the electronic control units of electric vehicles (EV) and charging stations, where efficient power management is crucial. Its low on-resistance and high current handling capability could potentially enhance battery management systems by reducing losses and improving charging efficiency.
- Renewable Energy: For solar power installations, the BSZ130N03MSGATMA1 might be an excellent choice for inverters and power optimizers. Its ability to handle high surge currents and its avalanche rating could be critical for dealing with the variable power output inherent to solar panels.
Note: These industry applications are conceptual and illustrative, necessitating a comprehensive evaluation by professionals to confirm suitability.
About Infineon Technologies AG
Infineon Technologies AG is a leader in the semiconductor industry, known for its innovative and high-quality products. Within the realm of transistors, and particularly Power Field-Effect Transistors, Infineon offers a wide variety of components designed to meet the needs of modern electronic devices. The BSZ130N03MSGATMA1 is a testament to Infineon’s commitment to providing cutting-edge technology for power management and switching applications.
Infineon’s portfolio extends beyond basic components, incorporating advanced technology in smart systems, IoT, and energy management. Their transistors are engineered to provide reliable performance in a diverse range of applications, from automotive and industrial to consumer electronics and renewable energy. Infineon’s focus on technology innovation, along with their commitment to sustainability, positions them as a key provider of electronic components that power the future.
Where to Find BSZ130N03MSGATMA1 by Infineon Technologies AG
To procure the BSZ130N03MSGATMA1, professionals involved in engineering or procurement should visit findchips.com. On this website, you can find current stock levels, pricing, and availability information from various distributors. Historically, this part has been available at distributors such as EBV Elektronik, TME, Future Electronics, Avnet Americas, DigiKey, and Newark. For those seeking alternatives or similar components, utilizing the link for Power Field-Effect Transistors on findchips.com may yield additional options from Infineon Technologies AG or other manufacturers. It is advised to verify current availability and pricing directly through findchips.com to ensure the most accurate and up-to-date information.