BSC021N08NS5ATMA1 by Infineon Technologies AG

Overview of BSC021N08NS5ATMA1 by Infineon Technologies AG

The BSC021N08NS5ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor (FET) that stands out due to its high drain current of 226A and low drain-source on resistance of 0.0021 ohms. It is designed for high-efficiency applications with a requirement for a high current capability and a low on-resistance. This N-Channel MOSFET operates at a drain-source voltage (Vds) of 80V, making it suitable for a wide range of applications that require high voltage operation. With a maximum operating temperature of 175°C, it is built to withstand extreme conditions, ensuring reliability and performance.

The device’s package is a TSON-8-3, an 8-pin small outline plastic/epoxy package designed for surface mount technology (SMT), reflecting its suitability for compact and high-density board designs. Moreover, being RoHS compliant and with an EAR99 ECCN code, it meets is compliant with global regulations for environmental and export standards.

Industry Applications for BSC021N08NS5ATMA1

Note: The potential industry applications mentioned below are conceptual and illustrative. They require analysis and verification by engineering and design teams to ensure adherence to industry standards and specific application requirements.

  • Consumer Electronics: The BSC021N08NS5ATMA1 could be potentially utilized in consumer electronics where high power efficiency and density are critical. Devices such as high-performance computing hardware, gaming consoles, and advanced home automation systems might benefit from its high current handling and low on-resistance, thus reducing energy loss and improving device longevity.
  • Energy and Power Systems: In energy systems, this MOSFET could be used in power supply units, DC-DC converters, and in the management of battery-powered devices, providing the necessary switching capabilities with minimal energy dissipation. Its high avalanche energy rating suggests it can handle significant energy spikes, making it suitable for applications where electrical noise is a concern.
  • Renewable Energy: For renewable energy applications, such as solar inverters or wind turbine power converters, the BSC021N08NS5ATMA1’s properties could be particularly beneficial. Its ability to switch at high frequencies with low loss is crucial for maximizing the efficiency of power conversion systems, which is paramount in renewable energy applications.
  • Industrial Automation: In the domain of industrial automation, the device might be employed in motor control circuits, robotic systems, and heavy machinery for high efficiency and reliable operation under stringent conditions. The robust design, capable of handling high pulsed drain current, aligns well with the surges typical in industrial applications.

These potential industry applications are possible due to the MOSFET’s high drain current capability, low on-resistance, and energy-efficient switching properties, among others. However, it’s important to emphasize that these are generalized ideas and specific use cases must be carefully evaluated for compliance with technical and safety standards.

About Infineon Technologies AG

Infineon Technologies AG is a leading global semiconductor manufacturer, renowned for its innovative contributions to the field of electronics. When it comes to Power Field-Effect Transistors and transistors in general, Infineon stands out with a diverse portfolio that includes a wide range of products catered to various applications. Among their offerings, the BSC021N08NS5ATMA1 exemplifies their commitment to providing high-performance, reliable solutions for energy-efficient power management and switching applications. Infineon’s expertise and stringent manufacturing processes ensure that their products, including a variety of power FETs, meet the highest industry standards for performance, durability, and environmental compliance. Infineon MOSFETs are engineered to address the pressing needs of modern electronic designs, offering solutions that enhance efficiency, reduce power losses, and enable compact form factors.

Where to Find BSC021N08NS5ATMA1 by Infineon Technologies AG

To procure the BSC021N08NS5ATMA1, interested parties are advised to visit findchips.com. Our site provides access to up-to-date stock levels, pricing, and availability from multiple distributors, helping buyers make informed decisions. For those looking for alternatives or similar parts, navigating to our Power Field-Effect Transistors section will offer a comprehensive selection, including other Infineon Technologies AG products or similar components from various manufacturers.

Historically, this MOSFET has been available from several leading distributors including Win Source Electronics, EBV Elektronik, Chip1Stop, Future Electronics, Mouser Electronics, Avnet Americas, DigiKey, and Newark. However, to obtain current stock levels and competitive pricing, visiting findchips.com is recommended for the most accurate and up-to-date information.

Compare pricing for BSC021N08NS5ATMA1 and other Power Field-Effect Transistors / Transistors at findchips.com