IXFN360N10T by IXYS Corporation

Overview of IXFN360N10T by IXYS Corporation

The IXFN360N10T is a high-power, N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed by IXYS Corporation. It features an exceptionally low on-resistance of 0.0026 ohms and a high drain current of up to 360A, making it a powerful component for various high-demand applications. It is built to handle a drain-source voltage up to 100V and can dissipate power up to 830 watts. The device is encapsulated in a SOT-227B package, known for its reliable and robust design, making it suitable for flange mount applications. Key technical attributes include an avalanche energy rating of 2000 mJ and the capacity for pulsed drain currents up to 900A, illustrating its ability to withstand high-energy pulses.

Notably, the IXFN360N10T is designed with an isolated case connection, which facilitates easier thermal management and enhances safety. It operates in enhancement mode, has a single configuration with a built-in diode, further exemplifying its versatility for switching applications. This component is also recognized for its adherence to environmental standards, being both RoHS and Pb-free compliant, and has an operating temperature range up to 175°C. Its attributes make it an invaluable part for designers looking for high-performance switching capabilities in demanding environments.

Industry Applications for IXFN360N10T

The IXFN360N10T MOSFET from IXYS Corporation, due to its robust capabilities, finds applications in a diverse range of industries. While the following uses are indicative of its broad applicability, it’s vital to remember that these are conceptual illustrations and detailed analysis by engineering and design teams is essential for adherence to industry standards and specific applications requirements.

  • Renewable Energy Systems: Its high power handling capability and efficiency might make it well-suited for inverter applications in solar power conversions, potentially enhancing energy efficiency and reliability.
  • Consumer Electronics: Given its power characteristics, the IXFN360N10T could potentially be used in power supplies for high-performance computing devices, offering improved efficiency and thermal management.
  • Energy and Power Systems: This MOSFET might be utilized in high-power, industrial switching applications, possibly including electric vehicle charging stations and uninterruptible power supplies, where its high current handling and efficiency are beneficial.
  • Electric Vehicles: Although not explicitly listed, components like the IXFN360N10T, with high power dissipation and thermal efficiency, could theoretically find application in the power conversion and management systems of electric vehicles subject to rigorous component analysis.

Note that the aforementioned potential applications are illustrative and require thorough verification for specific uses, ensuring they meet the stringent criteria inherent to each industry.

About IXYS Corporation

IXYS Corporation stands as a significant player in the domain of power semiconductors and mixed-signal ICs, with a special emphasis on Power Field-Effect Transistors. They are recognized for manufacturing components that are critical in power efficiency, conversion, and management applications across a broad spectrum of industries. The IXFN360N10T MOSFET is among the high-performance electronic parts they offer, showcasing their commitment to innovation in high-power technology. IXYS Corporation’s components are known for their reliability, durability, and performance in challenging environments, cementing their reputation as a go-to source for power MOSFETs and related technologies.

Where to Find IXFN360N10T by IXYS Corporation

To source the IXFN360N10T MOSFET or explore alternatives for your engineering and procurement needs, findchips.com offers an extensive inventory from various distributors. You can find real-time stock levels, pricing, and detailed component information. For those specifically looking for Power Field-Effect Transistors, the dedicated section on findchips.com provides a comprehensive list of parts from IXYS Corporation and other manufacturers, allowing you to compare and make an informed decision based on your requirements.

Historically, the IXFN360N10T has been available from distributors such as TME, TTI, Future Electronics, and Mouser Electronics. However, inventory can fluctuate, so it’s recommended to check current availability and pricing on findchips.com to find the best option for your needs.

Compare pricing for IXFN360N10T and other Power Field-Effect Transistors / Transistors at findchips.com