Overview of IRFB4110PBF by Infineon Technologies AG
The IRFB4110PBF is a high-performance Power Field-Effect Transistor (FET) characterized by its impressive specifications: a drain current (I(D)) of 180A, breakdown voltage (V(BR)DSS) of 100V, and drain-source on-resistance of just 0.0045 ohms. This device is an N-Channel MOSFET, which is fabricated from silicon using metal-oxide semiconductor technology. It is packaged in a TO-220AB package, which is a plastic, lead-free, and through-hole mounting format, making it easy to integrate into various circuit designs. The IRFB4110PBF stands out for its low on-resistance and high current handling capacity, making it an excellent choice for power switching and management applications.
Industry Applications for IRFB4110PBF
Given its electrical characteristics, the IRFB4110PBF by Infineon Technologies AG can be considered for a wide range of industry applications. Although these potential industry applications are only conceptual or illustrative and require analysis and verification by engineering and design teams for adherence to industry standards and specific application requirements, some could include:
- Automotive systems: This part could potentially serve in electric vehicle controllers, power distribution modules, or as part of battery management systems, given its high current capability and efficiency.
- Industrial Automation: Devices requiring efficient power management and switching within automation systems could benefit from the IRFB4110PBF’s specifications, including motor control units and power inverters.
- Computing and Data Storage: High-performance computing systems and servers, which demand efficient power management and thermal control, might utilize these FETs for power supply units and in voltage regulation modules.
- Renewable Energy Systems: In solar inverters and wind turbine controllers, where efficient power conversion is essential, the IRFB4110PBF’s high current handling and low on-resistance could enhance system performance.
- Telecommunications: Given its capability to switch power efficiently, this component could also find application in power amplifiers and RF transceivers, which are essential parts of telecommunications infrastructure.
Note that these industry applications are only representative examples. The actual suitability of the IRFB4110PBF for a specific application depends on an array of factors that engineering and design teams need to consider.
About Infineon Technologies AG
Infineon Technologies AG is a leading global semiconductor manufacturer specializing in high-performance power electronics, advanced digital security technologies, and semiconductors for automotive applications. When it comes to Power Field-Effect Transistors, Infineon is recognized for producing devices that enhance energy efficiency, mobility, and security. The company’s portfolio includes a wide range of power transistors, including the IRFB4110PBF, which exemplify their commitment to providing components that push the boundaries of what’s possible in electronic design. Infineon’s power FETs are designed to meet stringent quality and reliability standards, satisfying the needs of the most demanding applications across various industries.
Where to Find IRFB4110PBF by Infineon Technologies AG
Those interested in acquiring the IRFB4110PBF or looking for alternatives can start their search at findchips.com. This part has been previously available at several major distributors, including Win Source Electronics, New Advantage Corporation, LCSC, and Schukat electronic. However, to get current stock levels, pricing, and to discover other Power Field-Effect Transistors that might be offered by Infineon Technologies AG or other manufacturers, it’s advisable to use FindChips to compare your options directly. Ensuring you have the most up-to-date information is crucial for making an informed procurement decision.