Overview of FF1200R17KP4_B2 by Infineon Technologies AG
The FF1200R17KP4_B2 manufactured by Infineon Technologies AG is an Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. This high-performance module features a collector current (I(C)) at a maximum of 1700 amps and a collector-emitter voltage (V(BR)CES) at maximum of 1700 volts, indicating a robust capability for handling high power densities and efficient electricity conduction.
The component is housed in a MODULE-10 package, with a pin count of 10. Its configuration consists of separate, 2 elements which are isolated from the case, providing a safety feature against electrical interference. The transistor is built from silicon, which is typical for high reliability and performance in semiconductor technology.
This part is labeled as active according to its life cycle code, and with its peak reflow temperature at approximately 260°C, it is suitable for certain traditional soldering methods. However, please note that this IGBT transistor is not qualified under the RoHS (Restriction of Hazardous Substances) directive, designating that the component may contain substances restricted by this regulation.
Industry Applications for FF1200R17KP4_B2
The IGBTs like the FF1200R17KP4_B2 are pivotal in various high-demand applications across multiple industries due to their efficiency in managing high power levels and fast switching capabilities.
- Industrial Automation: This transistor could potentially be used in motor drive controllers and power supplies, which require components that can handle significant electrical loads and operational frequencies.
- Consumer Electronics: Given its high power Dissipation-Max (Abs) at 6250 W and robust operational capabilities, the FF1200R17KP4_B2 might be suitable for power management systems in appliances that demand high energy efficiency and reliability.
- Telecommunications: Base station power supplies could employ this IGBT for effective power control, enhancing system efficiency and reliability in challenging operational conditions.
- Aerospace and Defense: The transistor’s capability to handle high voltages and currents may make it suitable for power systems in spacecraft or defense equipment, though specific use would need to adhere to stringent industry standards and performance criteria not covered by its current qualifications.
Note that these potential industry applications are conceptual and would require thorough verification by engineering teams to ensure compliance with specific regulatory standards and real-world performance demands.
About Infineon Technologies AG
Infineon Technologies AG, a leader in the semiconductor industry, has developed significant expertise in the design and manufacturing of IGBTs and other transistor technologies. The German-based company offers a wide range of electronic components that cater to a multitude of applications across automotive, industrial, and consumer markets, among others.
Infineon is known for its rigorous focus on quality and innovation, and the FF1200R17KP4_B2 is a testament to this, demonstrating advanced capabilities in handling high power and efficient performance essential for modern electronic applications.
Where to Find FF1200R17KP4_B2 by Infineon Technologies AG
To procure the FF1200R17KP4_B2, check the real-time availability and pricing at findchips.com. At findchips.com, one can also explore other IGBTs that might be alternatives to FF1200R17KP4_B2 should your specifications require slightly different features. Historically, this part has been listed at distributors such as Mouser Electronics.
Given the dynamic nature of component stock and pricing, it is highly recommended to use findchips.com for the latest information regarding this IGBT and other related parts.