Overview of SCT3120ALGC11 by ROHM Semiconductor
The SCT3120ALGC11 is a high-performance Silicon Carbide (SiC) Power Field-Effect Transistor designed for efficient power management. This transistor operates with a drain current of 21A and can withstand a drain-source voltage of 650V. The part boasts a low on-resistance of 0.156 ohms and features a single-channel with built-in diode configuration in a TO-247N package. Manufactured by ROHM Semiconductor, it adheres to environmental standards with Pb-free and RoHS compliance but is not compliant with REACH regulations.
Introduced by ROHM Semiconductor on March 13, 2017, the SCT3120ALGC11 is an N-Channel Metal-Oxide Semiconductor FET optimized for both high efficiency and thermal performance. The part comes encapsulated in a plastic/epoxy package which provides physical durability and supports through-hole mounting, not suited for surface mount technology applications. This component attributes itself to switching applications, ensuring reliable operation in high-voltage environments.
According to the factory lead time data from the findchips.com as of the current writing, the lead time for SCT3120ALGC11 is 27 weeks.
Industry Applications for SCT3120ALGC11
The SCT3120ALGC11 might see usage in a variety of sectors where high voltage and power efficiency are required. Based on the specifics of this component, its superior high-voltage handling and energy efficiency make it particularly suited for:
- Energy and Power Systems: This transistor could potentially be integrated into power conversion systems, AC/DC converters, or in the power transmission systems used in grid infrastructure. The high breakdown voltage and robustness provided by its Silicon Carbide material are crucial for these applications.
- Renewable Energy: SCT3120ALGC11 might be suitable in photovoltaic (PV) inverters or wind turbine converters, facilitating effective power management and reducing energy loss during power conversion processes. Its high thermal stability makes it a good candidate for environments where reliability under varying weather conditions is essential.
Note that these potential industry applications are conceptual and require detailed analysis by engineering teams to ensure compatibility and compliance with specific standards and requirements.
About ROHM Semiconductor
ROHM Semiconductor is a pioneer in electronic components, notably in the domain of transistors. Their expertise extends significantly in the manufacturing of Power Field-Effect Transistors, where they offer a diverse range of products including Silicon Carbide (SiC) MOSFETs, exemplified by the SCT3120ALGC11. This product, alongside similar SiC FETs, stands out due to their high efficiency, thermal management, and durability, targeting advanced electronic applications.
ROHM’s commitment to innovation is reflected in its robust product offerings that cater to the evolving needs of modern power applications. The SCT3120ALGC11 is just one example of how ROHM’s components facilitate improved power handling and efficiency, critical for high-performance electronic systems.
Where to Find SCT3120ALGC11 by ROHM Semiconductor
To procure the SCT3120ALGC11, engineering or procurement professionals are recommended to utilize findchips.com for the most accurate and current availability and pricing information. The part was historically available through distributors such as LCSC, CoreStaff Co Ltd, Chip1Stop, and Avnet Asia, among others. However, stock levels and availability may fluctuate, hence checking findchips.com will provide real-time data.
Moreover, if alternative transistors are required, findchips.com’s portal for Power Field-Effect Transistors includes numerous listings that might serve as suitable substitutes to the SCT3120ALGC11, featuring components from ROHM Semiconductor and other leading manufacturers.