Overview of BSZ100N06LS3GATMA1 by Infineon Technologies AG
The BSZ100N06LS3GATMA1 is a Power Field-Effect Transistor (MOSFET) designed by Infineon Technologies AG, featuring a drain current (I(D)) of up to 20A, with a 60V drain-source voltage (Vds), and a low on-resistance of 0.0179 ohms. This N-Channel MOSFET is fabricated using Silicon, encapsulated in a green, plastic, TSDSON-8 package. It’s also characterized by an Rds(On) test voltage of 10V, and a maximum gate source threshold voltage of 1.7V. The component is marked as RoHS compliant, emphasizing its adaptability for environmentally sensitive applications.
The MOSFET’s properties, such as its high current capacity and low on-resistance, make it highly efficient for power management applications. The surface-mount device is designed for enhancement mode operation, and it incorporates features for logic level compatibility. The BSZ100N06LS3GATMA1 is noted for its durability and ability to handle significant power dissipation (up to 50W), with a robust peak pulsed drain current (IDM) of up to 80A. Moreover, it includes a built-in diode, ensuring protection and reliability in circuit operation, and the part is operational across a wide temperature range from -55°C to +150°C. Its package and low moisture sensitivity level (MSL 1) make it suitable for various industrial environments.
Notably, the BSZ100N06LS3GATMA1 supports high-efficiency switching applications, a pivotal attribute for today’s energy-centric electronic designs. Its characteristics position it as an ideal choice for engineers looking to optimize the power handling capabilities of their projects, while maintaining stringent performance and efficiency criteria.
Industry Applications for BSZ100N06LS3GATMA1
The unique attributes of BSZ100N06LS3GATMA1 enable its usage across a wide range of applications and industries. While the applications mentioned below are possible use cases, they require careful validation by engineering teams to ensure compliance with industry standards and specific application requirements:
- Consumer Electronics: The MOSFET could potentially be integrated into power management circuits within portable consumer electronics, such as laptops, smartphones, and tablets. Its low on-resistance and high current handling capability make it suitable for efficient power regulation and conversion, enhancing battery life and reducing heat generation in these devices.
- Energy and Power Systems: Given its high power dissipation and robustness, the BSZ100N06LS3GATMA1 might find application in power supply units, DC-DC converters, and as part of the switching elements in uninterruptible power supplies (UPS). These components require efficient and reliable switching with minimal power loss, which the described MOSFET can provide.
- Renewable Energy Systems: The efficiency and power handling characteristics of the BSZ100N06LS3GATMA1 could make it a candidate for use in inverters for solar panels or wind turbines. Here, the MOSFET would be responsible for converting and managing the power harvested from renewable sources, optimizing the energy conversion process for grid or battery storage.
Note: The potential industry applications mentioned are conceptual and illustrative. Their implementation necessitates comprehensive analysis and verification by professional engineering and design teams, to meet the respective industry standards and specific application requirements.
About Infineon Technologies AG
Infineon Technologies AG is a leading innovator in the semiconductor industry, with a strong focus on applications that require power efficiency, mobility, and security. In the domain of Power Field-Effect Transistors, Infineon stands out with a comprehensive portfolio that addresses a wide range of power levels and performance needs. The BSZ100N06LS3GATMA1 is a part of this broad category, showcasing Infineon’s commitment to producing components that lead in efficiency, reliability, and environmental sustainability. Infineon continuously innovates in the MOSFET space, offering solutions that range from basic switching applications to highly complex power management systems. Infineon’s parts are designed to push the boundaries of what is possible in electronic design, catering to a global market with demands for higher performance and lower power consumption.
Where to Find BSZ100N06LS3GATMA1 by Infineon Technologies AG
To procure the BSZ100N06LS3GATMA1 for your application, a comprehensive search across multiple distributors is recommended. This can efficiently be done via findchips.com, which aggregates information from various sources and provides up-to-date stock levels and pricing. Historically, the part has been available from distributors such as Win Source Electronics, New Advantage Corporation, EBV Elektronik, Future Electronics, Mouser Electronics, Avnet Americas, DigiKey, and Newark. However, inventory can fluctuate, making it crucial to check current availability and pricing through findchips.com. For alternate parts to the BSZ100N06LS3GATMA1 that might be offered by Infineon Technologies AG or other manufacturers, the Power Field-Effect Transistors link can be used to explore suitable options.