FF11MR12W1M1B11BOMA1 by Infineon Technologies AG

Overview of FF11MR12W1M1B11BOMA1 by Infineon Technologies AG

The FF11MR12W1M1B11BOMA1 is described as a power field-effect transistor, specifically an N-channel metal-oxide semiconductor field-effect transistor (MOSFET) configured in a half bridge. This component features a drain-source voltage capacity (Vds) of 1.2 kV and a continuous drain current rating (Id) of 100A, suitable for high-power applications. The device is encapsulated in an 18-terminal MODULE-18 package, ensuring sufficient cooling and isolation for high voltage operations.

The part includes two FET elements that are series connected with a center tap, integrated with a built-in diode and thermistor, which enhance its performance and safety in operation. Notably, this MOSFET can handle a pulsed drain current up to 200 A, a characteristic that makes it eligible for tasks involving high-current pulses. Operating temperature ranges from -40 °C, underlining its stability over a broad spectrum of environmental conditions. Infineon Technologies, noted for their robust semiconductor solutions, ensures this component conforms with ROHS and REACH compliance codes, demonstrating a commitment to environmental considerations in manufacturing.

Industry Applications for FF11MR12W1M1B11BOMA1

The characteristics and specifications of FF11MR12W1M1B11BOMA1 suggest suitability for several high-power applications across different industries. Below are potential industry applications considering the part attributes:

  • Education and Research: Due to its robust design and capability to handle high electrical specs, FF11MR12W1M1B11BOMA1 could potentially be used in laboratory power supply units commonly used in university engineering departments and research institutes, where stable and reliable high-current supplies are crucial.
  • Telecommunications: With its high power capability and stable operation in a broad temperature range, this MOSFET might be suitable for RF amplifiers, which require components that can support DC high power switching and maintenance of signal integrity in a very demanding environment.

Please note these industry applications are purely illustrative and require detailed analysis and verification by engineering teams for specific application standards and requirements.

About Infineon Technologies AG

Infineon Technologies AG is a leading innovator in the field of semiconductor solutions, particularly focusing on segments such as Power Field-Effect Transistors and other transistor types. Their range of semiconductor products, including the FF11MR12W1M1B11BOMA1, stands out in the market for integrating state-of-the-art technology crafted for high efficiency, reliability, and performance in industrial applications. Infineon’s innovations are applicable in various sectors including automotive, industrial power control, power management, chip card, and security solutions among others.

Where to Find FF11MR12W1M1B11BOMA1 by Infineon Technologies AG

For procurement of FF11MR12W1M1B11BOMA1, comprehensive research on availability and pricing can be conducted through FindChips.com. Historically, distributors such as Chip1Stop and Newark have stocked this part, though real-time stock levels must be checked. Searching through FindChips.com can not only provide current availability but also access to competing Power Field-Effect Transistors, possibly offering alternatives by Infineon Technologies or other manufacturers better suited to specific needs.

Compare pricing for FF11MR12W1M1B11BOMA1 and other Power Field-Effect Transistors / Transistors at findchips.com