Overview of FQD2N90TM by onsemi
The FQD2N90TM from onsemi is an N-Channel Power MOSFET designed for high voltage applications, capable of handling a drain-source voltage of up to 900V. This component features a continuous drain current (Id) of 1.7A and has an on-resistance (Rds(on)) of 5.6Ω, tested at a gate-source voltage (Vgs) of 10V. It is packaged in a TO-252 (DPAK) format making it suitable for compact designs requiring high power density and performance.
The part is a QFET® transistor, indicating a proprietary technology by onsemi focusing on energy efficiency and high performance. The MOSFET also includes a built-in diode, supporting single configuration, and is designed using metal-oxide semiconductor technology. Provided in reels of 2500 units, this product is compliant with RoHS standards, indicating a prioritization of environmental considerations in its manufacturing process. Peak reflow temperature during mounting is specified at 260°C, and the component operates at a maximum temperature of 150°C. Currently, the factory lead time for this component is reported as 34 weeks, reflecting its manufacturing and delivery schedules.
Industry Applications for FQD2N90TM
The FQD2N90TM could potentially serve multiple industries where high voltage and moderate current handling are required. Below are illustrative applications across various sectors:
- Consumer Electronics: Potentially used in power supplies for televisions and audio systems, where efficient power conversion is essential to conserve energy and reduce heat generation. Its low on-resistance and built-in diode could contribute to more reliable switching and lower power losses.
- Industrial Automation: Could be employed in motor control circuits and automation hardware. The high breakdown voltage provides the capacity to manage industrial-level voltages, possibly improving equipment safety and performance.
- Telecommunications: This transistor might be appropriate for use in RF amplifiers, where dependable switch performance and power efficiency are necessary. FQD2N90TM‘s physical and electrical characteristics could aid in enhancing signal consistency and longevity of telecommunications equipment.
- Computing and Data Storage: Potentially useful in server power supplies, contributing to reducing operational inefficiencies through its MOSFET technology which is ideal for high switching speeds and lower voltage drops.
- Energy Management Systems: Could be employed in inverter circuits for renewable energy sources such as solar panels or wind turbines, aiding in converting DC to AC while maximizing efficiency and minimizing energy loss.
Note: The potential industry applications listed above are conceptual. Engineering and design teams need to analyze and verify the suitability of this transistor for specific applications, ensuring adherence to industry standards and project requirements.
About onsemi
onsemi stands as a key player in the manufacturing of semiconductor components and devices, specializing explicitly in solutions that drive energy efficiency. Within the realm of Power Field-Effect Transistors, onsemi offers a wide variety of products including the FQD2N90TM and other similar devices. These products are designed to address the demanding needs across various applications, focusing on high voltage capabilities and enhanced power handling. onsemi’s expertise in developing application-specific components makes them a reliable source for high-performance transistors used in both standard and complex electronic assemblies.
Where to Find FQD2N90TM by onsemi
If you are in search of the FQD2N90TM, or other Power Field-Effect Transistors, it’s recommended to visit findchips.com, where you can find current stock levels and pricing information. Historically, this part has been available at distributors such as DigiKey, Mouser Electronics, TME, and Future Electronics. It is crucial, however, to check for the most up-to-date availability and pricing directly from findchips.com.