Overview of IPB017N10N5LFATMA1 by Infineon Technologies AG
The IPB017N10N5LFATMA1 by Infineon Technologies AG stands out in the realm of electronic components as a high-performance Power Field-Effect Transistor (Power FET). It features a continuous drain current (Id) of 180A, making it suitable for high power applications. With a drain-source voltage (Vds) of 100V and impressively low drain-source on-resistance of just 0.0017 ohms, this N-Channel MOSFET is engineered to deliver efficient performance. Its RoHS compliance ensures it meets global environmental standards.
Constructed with a silicon-based metal-oxide semiconductor technology, this transistor is packaged in a TO-263, D2PAK-7/6 outline, offering a compact footprint for surface-mounted applications. The part is designed with a built-in diode, enhancing its functionality and reliability across various conditions. With an operating temperature range of -55°C to 150°C and a maximum power dissipation of 313W, the IPB017N10N5LFATMA1 is prepared to withstand challenging environments and high-power demands. Furthermore, its moisture sensitivity level of 1 indicates its durability during manufacturing processes involving moisture exposure. It is worth noting that the factory lead time for this part is currently 18 Weeks, 3 Days, reflecting its availability status as of this writing.
Industry Applications for IPB017N10N5LFATMA1
The versatility and high-performance specifications of the IPB017N10N5LFATMA1 make it potentially suitable for a broad range of industry applications. The following list of industries and use cases is only conceptual and requires further analysis and verification by engineering and design teams:
- Energy and Power Systems: This MOSFET could potentially be utilized in power conversion systems such as inverters, converters, and power supply units due to its high drain current and low Rds(on). Its efficiency in switching applications enhances power conservation in renewable energy installations, such as solar photovoltaic systems and wind turbines.
- Medical Imaging: High-performance transistors like the IPB017N10N5LFATMA1 might find application in advanced medical imaging equipment, where precision and reliability are paramount. Its high current capacity and robustness make it a strong candidate for use in MRI machines and CT scanners, which require stable power management for accurate image generation.
- Robotics and Drones: Robotics and unmanned aerial vehicles (drones) that demand high efficiency and power density could benefit from incorporating this MOSFET into their designs. Its high power handling and efficiency could be crucial for motor control applications, ensuring longer operational life and optimal performance of the equipment.
It’s important to note that these potential industry applications are illustrative and should be verified for compatibility and standard compliance by qualified professionals before implementation.
About Infineon Technologies AG
Infineon Technologies AG is a leading force in the semiconductor industry, known for its innovative contributions to the field of electronic components, especially in the category of transistors. Among its broad portfolio, the company specializes in Power Field-Effect Transistors, offering a wide range of products designed for efficiency, reliability, and performance. The IPB017N10N5LFATMA1 is an excellent example of Infineon’s commitment to quality and innovation. Infineon’s line of MOSFETs is characterized by their durability, high power density, and low power dissipation, making them well-suited for a variety of demanding applications.
Where to Find IPB017N10N5LFATMA1 by Infineon Technologies AG
For those interested in purchasing the IPB017N10N5LFATMA1, findchips.com offers a reliable platform for comparing prices and availability from various distributors. This part has been historically available through a variety of distributors, including Win Source Electronics, New Advantage Corporation, EBV Elektronik, and Future Electronics, among others. However, to ensure access to the most current stock levels and pricing information, potential buyers are urged to consult findchips.com. Additionally, for projects requiring alternative components or those interested in comparing similar parts, Findchips provides an invaluable resource with its extensive listing of Power Field-Effect Transistors, including those offered by Infineon Technologies AG or other manufacturers.