Overview of IPB027N10N3GATMA1 by Infineon Technologies AG
The IPB027N10N3GATMA1 is a high-performance Power Field-Effect Transistor that integrates robust features into a small package. This N-channel MOSFET is designed to handle a drain current of up to 120A and a drain-source breakdown voltage of 100V. This part features an exceptionally low drain-source on-resistance of just 0.0027 ohms, enabling efficient power management in a variety of applications.
Manufactured by Infineon Technologies AG, the device comes in a TO-263-3 package, commonly known as D2PAK, which is a plastic, green, small outline package with three pins. The MOSFET operates in enhancement mode and has a maximum operating temperature of 175 °C. This device also includes a built-in diode and supports a pulsed drain current max (IDM) of 480 A, enhancing its reliability in high-power and rapid-switching applications. Even though it is not RoHS compliant, it adheres to several other environmental and regulatory standards.
Industry Applications for IPB027N10N3GATMA1
Given the characteristics of the IPB027N10N3GATMA1, several industry applications come into perspective where this part could potentially be very useful. It’s important to note that these applications are speculative and should be further verified by engineering teams for compliance with specific use-case requirements.
- Energy and Power Systems: With its high current capacity and low on-resistance, this MOSFET could potentially be used in high-efficiency power supplies and converters which are crucial in power plants or substations. Its ability to handle higher temperatures can be beneficial for applications involving higher power dissipation.
- Transportation and Logistics: This part might be suited for electric vehicle (EV) power management systems, including battery management and voltage regulation systems. The fast switching capability and robust thermal properties make it an ideal candidate for applications that require high reliability and performance.
- Renewable Energy: In solar power inverters or wind turbine power converters, this device could potentially help in converting and managing power more efficiently. Its high avalanche energy rating of 1000 mJ supports usage in environments where sudden high energy bursts occur, such as in power inverters.
Please note that these potential industry applications are conceptual and require thorough analysis and verification by specialized engineering and design teams regarding adherence to industry standards and specific application requirements.
About Infineon Technologies AG
Infineon Technologies AG is a prominent leader in semiconductor solutions, focusing on digital technologies, including sensors, microcontrollers, and Power Field-Effect Transistors. In regards to the product category in focus, Infineon is known for producing high-quality MOSFETs and other semiconductor components that cater to a broad range of technological needs. Infineon’s products, including the IPB027N10N3GATMA1, are designed to offer reliability, performance, and innovation, meeting the complex and evolving demands of the electronics industry.
Where to Find IPB027N10N3GATMA1 by Infineon Technologies AG
If you are considering purchasing the IPB027N10N3GATMA1, findchips.com provides a robust platform to verify availability and pricing from various distributors. This part has been available through distributors like Win Source Electronics, New Advantage Corporation, Bristol Electronics, and DigiKey among others. However, for the most current stock levels and best pricing, visiting findchips.com is recommended. Additionally, the site allows you to explore alternate parts from Infineon Technologies AG or other manufacturers within the Power Field-Effect Transistors category, ensuring you find the right component for your specific needs.