Overview of IPD031N03LGATMA1 by Infineon Technologies AG
The IPD031N03LGATMA1 is a Power Field-Effect Transistor characterized by a drain current (I(D)) of 90A and a drain-source voltage (Vds) of 30V. This N-channel MOSFET, fabricated with silicon in a TO-252 package, exhibits a very low drain-source on-resistance of just 0.004 ohms. It incorporates logic level compatibility and features built-in avalanche-rated diodes which make it suitable for rugged applications. The device is encapsulated in a green, plastic package which aligns with restrictions on hazardous substances (RoHS compliant).
Infineon Technologies AG, the manufacturer of this component, specifies an operating temperature maximum of 175 °C, showcasing its ability to withstand high-temperature environments. The transistor is also noted for its enhancement mode operation, meaning it requires a positive gate-source voltage to turn on. Features such as a pulsed drain current maximum of 400A indicate its capability to handle high transient currents, making it an excellent choice for switching applications.
Industry Applications for IPD031N03LGATMA1
The specific properties and performance parameters of the IPD031N03LGATMA1 suggest its utility across several high-demand industries. While these potential applications are conceptual and require thorough validation by engineering teams for specific uses, the part’s attributes lend it to be a favorable candidate in the following sectors:
- Automotive: Considering its robustness indicated by the high pulsed drain current capability and the operating temperature range, this MOSFET could potentially be used in automotive applications like electronic power steering and battery management systems. Such applications demand components that can handle rapid switching and high currents without failure.
- Industrial Automation: The high reliability and efficiency provided by the low on-resistance and avalanche rating might enable its use in motor control units and heavy duty power supplies which are common in automated manufacturing lines and robotics.
- Consumer Electronics: In power regulation schemes within consumer electronics, especially where space and efficiency are crucial, the small footprint and high current capabilities of the transistor could be beneficial for power supplies in computers and gaming consoles.
- Telecommunications: This transistor could potentially serve in radio frequency power amplifiers which are pivotal in telecommunications infrastructure, supporting enhanced signal integrity and efficiency.
Please note these industry applications are illustrative and require proper analysis to ensure compatibility and adherence to specific operational standards.
About Infineon Technologies AG
Infineon Technologies AG is a pivotal player in the semiconductor industry, particularly renowned for its robust lineup of Power Field-Effect Transistors. Their products are designed to offer reliability and performance in demanding applications, making them ideal for high power and high voltage scenarios. Infineon’s commitment to innovation is exhibited in products like IPD031N03LGATMA1 and their broad portfolio that addresses a full spectrum of applications, from automotive to industrial and power management solutions.
Where to Find IPD031N03LGATMA1 by Infineon Technologies AG
To purchase the IPD031N03LGATMA1, it’s recommended to check its availability on findchips.com. On this platform, you can also explore other Power Field-Effect Transistors which might offer similar features and performance. Historically, this part has been available through distributors like EBV Elektronik, Mouser Electronics, DigiKey, and Newark. However, for the most current stock levels and pricing, please refer directly to findchips.com.