IPP110N20N3GXKSA1 by Infineon Technologies AG

Overview of IPP110N20N3GXKSA1 by Infineon Technologies AG

The IPP110N20N3GXKSA1 is a Power Field-Effect Transistor (FET) designed for high performance applications. This N-channel MOSFET features a maximum drain current of 88A and a breakdown voltage rating of 200V. With an on-resistance value of just 0.011 ohms, it offers efficient power control with minimal energy loss, making it suitable for various demanding electronic applications. The device is configured as a single element with a built-in diode, enhancing its versatility in different circuit designs.

Manufactured by Infineon Technologies AG, the IPP110N20N3GXKSA1 comes in a TO-220AB package, which is recognized for its superior thermal performance and ease of mounting. This particular part is made from silicon and complies with both RoHS and REACH regulations, indicating it is free from hazardous materials and environmentally friendly. As of the current writing, the factory lead time for this part is approximately 16 weeks and 4 days, which is essential to note when planning your procurement timelines.

Industry Applications for IPP110N20N3GXKSA1

The IPP110N20N3GXKSA1 could potentially find applications across a variety of industries. Below are a few examples of how this MOSFET might be integrated into different sectors:

• Industrial Automation: In industrial settings, this transistor might be utilized in motor control circuits. Its high current capability and low on-resistance could enable efficient switching in applications such as variable frequency drives or servo systems.
• Automotive: The part could potentially be used in automotive power management systems, including power supply circuits and inverters. Its robust design and high temperature tolerance (up to 175°C) may align well with automotive requirements, particularly in electric vehicle systems.
• Consumer Electronics: Given its efficient switching capabilities, the IPP110N20N3GXKSA1 might be suitable for use in power supplies of consumer electronics. Devices such as televisions or audio systems that require high current loads could benefit from its low energy losses.
• Telecommunications: This part could also play a role in telecommunications equipment, where power amplifiers or other high-efficiency switching applications are necessary. The built-in diode simplifies circuit designs and enhances reliability, which is crucial in communication systems.
• Robotics and Drones: In the realm of robotics, this MOSFET might be used in power distribution systems where high current capacity is needed. Additionally, it could facilitate precise motor control within drone systems, optimizing energy usage during flight.

It is important to note that these potential industry applications are conceptual and require analysis and verification by engineering and design teams for adherence to industry standards and specific application requirements. Similar components could also be used in these applications, depending on the specific circuit needs and design constraints.

About Infineon Technologies AG

Infineon Technologies AG is a global semiconductor manufacturer known for producing efficient and high-performance electronic components, including Power Field-Effect Transistors such as the IPP110N20N3GXKSA1. The company has established itself as a key player in various areas, particularly in power management, automotive, and industrial applications. Infineon’s transistors are designed with an emphasis on reliability and efficiency, featuring advanced technologies that enable reduced power losses and enhanced thermal management.

The IPP110N20N3GXKSA1 is part of a broader offering that includes various MOSFETs and IGBTs tailored for specific applications. Infineon also manufactures similar parts that may share attributes like high current capacity, low on-resistance, and robust thermal performance, catering to a diverse range of industry needs.

Where to Find IPP110N20N3GXKSA1 by Infineon Technologies AG