Overview of IPT012N08N5ATMA1 by Infineon Technologies AG
The IPT012N08N5ATMA1 is a Power Field-Effect Transistor that features a draining current of 52A and a diode current up to 300A. It operates at 80V with a low drain-source on resistance of 0.0012 ohms. It is a single-element, N-Channel, silicon-based metal-oxide semiconductor FET hosted in a HSOF-8 package. The component is characterized by a breakdown voltage minimum of 80V and a pulsed drain-current maximum of 1200A.
Manufactured by Infineon Technologies AG, this transistor is an active part with a life cycle code designation and is suitable for high-efficiency, high-speed switching applications. Its remarkable avalanche energy rating of 817 mJ underscores its robustness, suitable for scenarios that may subject the transistor to high energy pulses. Further, the transistor is packaged in a plastic/epoxy small outline, featuring a drain connection to its case. It is preferred for use in systems where space and power efficiency are crucial, owing to its enhanced mode operation and low on-resistance.
Industry Applications for IPT012N08N5ATMA1
The following industry applications might find the IPT012N08N5ATMA1 suitable for their specific needs, each relying on its efficiency and high power handling capabilities:
- Telecommunications: In telecommunications, this transistor could potentially be utilized in signal amplification and switching systems. Its low on-resistance and high-speed switching are pivotal for energy-efficient signal management.
- Consumer Electronics: For applications such as power management in consumer electronics, where space is limited and efficiency is paramount, this transistor’s compact design and high current handling capacity could be advantageous.
- Industrial Automation: The robust nature of IPT012N08N5ATMA1, especially its high avalanche energy rating, makes it a likely candidate for demanding environments like industrial automation, where transistors might be required to handle high energy loads and frequent switching.
- Computing and Data Storage: This part can manage high current rates, vital for power supplies in computing and data storage systems, potentially enhancing the efficiency and durability of power management modules.
Note that these potential industry applications are conceptual/illustrative and require detailed analysis and verification by engineering and design teams to ensure they meet the necessary standards and application-specific demands.
About Infineon Technologies AG
Infineon Technologies AG is a leading provider in the semiconductor world, notably excelling in the production of Power Field-Effect Transistors. They create reliable transistor components, such as the IPT012N08N5ATMA1, engineered for optimal performance in a variety of electronic applications. Infineon’s transistors are well-regarded for their efficiency, durability, and advanced technology, making them suitable for high-demand environments and sophisticated electronic systems.
Infineon ensures that its products, like the IPT012N08N5ATMA1, meet rigorous industry standards and consumer demand for greener products by adhering to RoHS compliant and Pbfree specifications. Their MOSFETs are designed to provide high efficiency and power density solutions, significant for developers focusing on energy-conscious innovations.
Where to Find IPT012N08N5ATMA1 by Infineon Technologies AG
For those considering purchasing the IPT012N08N5ATMA1, it is recommended to research availability on findchips.com. By using the Power Field-Effect Transistors link, you can find this model as well as potential alternatives. Historically, distributors such as DigiKey, Mouser Electronics, and TME have stocked this item, though availability can vary. Therefore, checking findchips.com will provide up-to-date stock levels and pricing from multiple suppliers.