Overview of IRFB31N20DPBF by Infineon Technologies AG
The IRFB31N20DPBF is a N-channel MOSFET from Infineon Technologies AG characterized by a drain-source voltage of 200V and a continuous drain current of 31A, which provides strong performance in high-power applications. Packaged in a TO-220AB form, it includes features such as a maximum drain-source on-resistance of 0.082 ohms, contributing to its efficiency in various switching applications. Its maximum gate-source threshold voltage is set at 5.5V, making it suitable for common gate drive voltages in various circuits. With a power dissipation maximum of 200 Watts, this MOSFET can manage significant thermal loads, making it suitable for robust, high-power designs. It’s also housed in a lead-free package, accommodating modern environmental compliance requirements for RoHS. This product was introduced into the market on November 29, 1999, marking it as a tried component in numerous applications, though it is now classified as obsolete, which implies replacements or equivalents may need to be considered for new designs.
Industry Applications for IRFB31N20DPBF
This power FET can be useful for a variety of applications within specific industries, requiring analysis by engineering teams to ensure compliance with specific applications. Here are some potential applications:
- Consumer Electronics: The IRFB31N20DPBF could potentially be used in high-end power supplies and other power management circuits within consumer electronics, where its ability to handle high currents and voltages might be essential for maintaining performance and durability within household devices such as desktop computers and gaming consoles.
- Energy and Power Systems: Given its high drain current capacity and robust voltage handling, this MOSFET might potentially be used in power conversion systems, possibly including power inverters in renewable energy installations or electrical grid management systems, where effective power handling and switching capabilities are critical.
- Renewable Energy: This device could potentially find utility in solar power systems and wind energy converters, where its avalanche energy rating of 420 mJ could provide robust performance under variable environmental and operational stresses commonly seen in outdoor and variable-power applications.
Note: The potential applications listed are conceptual and must be verified by engineering and design teams for adherence to industry-specific standards and specific application requirements.
About Infineon Technologies AG
Infineon Technologies AG is a key player in the semiconductor and Power Field-Effect Transistors market. They specialize in innovative semiconductor solutions that contribute to a more efficient, smart, and green environment. Among the products they manufacture, the IRFB31N20DPBF and other related power FETs are significant components, designed to meet diverse industry needs from automotive to industrial applications. Infineon’s focus on reliability and performance, combined with a commitment to forward-looking technologies, makes their products suitable for a wide range of applications that require high-quality, durable semiconductors.
Where to Find IRFB31N20DPBF by Infineon Technologies AG
If you are considering purchasing the IRFB31N20DPBF, you can look up current stock levels and pricing onFindchips.com. The part has historically been available through distributors like Win Source Electronics, Avnet Americas, and Newark. However, availability can vary, and it’s useful to check for up-to-date information. Additionally, by exploring the Power Field-Effect Transistors category on Findchips, you can find alternate parts that might be offered by Infineon Technologies AG or other manufacturers, which can substitute this obsolete part in your applications.