JANTX2N6796 by Infineon Technologies AG

Overview of JANTX2N6796 by Infineon Technologies AG

The JANTX2N6796 is a high-reliability, N-channel metal-oxide semiconductor field-effect transistor (MOSFET) housed in a hermetically sealed TO-205AF package, also known as TO-39. This transistor is characterized by a drain-source on-resistance of 0.195 ohms, a maximum drain current of 8A, and can handle a DS breakdown voltage minimum of 100V. Its power dissipation capacity is up to 25 watts, making it suitable for robust applications that demand reliable switching and amplification capabilities.

Furthermore, the JANTX2N6796 operates effectively within a broad temperature range from -55°C to 150°C and supports a pulsed drain current (IDM) up to 32A, indicating a strong performance in tough conditions. The part is also qualified according to MIL-19500 standards, indicating its suitability for applications requiring military-grade components. Infineon Technologies AG manufactures the JANTX2N6796, leveraging its extensive expertise in fabricating durable and efficient Power Field-Effect Transistors.

Industry Applications for JANTX2N6796

In our exploration of industry applications, it’s crucial to remember that these are provisional suggestions, necessitating additional vetting and conformance to specific standards by relevant professional engineering and design teams:

  • Energy and Power Systems: The JANTX2N6796 might potentially be utilized in power converters and inverters. The ability to handle high drain currents and sustain a high breakdown voltage makes it a plausible candidate for power transmission applications that require efficient switching and voltage regulation.
  • Industrial Automation: This component could serve roles in motor control circuits and automated manufacturing equipment. Its high reliability and robustness in terms of temperature and power handling make it suitable for tough industrial environments.
  • Renewable Energy: In solar inverters or wind turbine converters, managing power efficiently is critical. The JANTX2N6796’s specifications suggest it could contribute beneficially to these systems, managing the flow and control of power.

These potential industry applications are conceptual and need thorough analysis and adherence to industry-specific standards and requirements by qualified personnel.

About Infineon Technologies AG

Infineon Technologies AG is a prominent leader in the semiconductor industry, particularly noted for its pioneering advancements in Power Field-Effect Transistors. The creation of components like the JANTX2N6796 underscores Infineon’s commitment to developing technologically advanced and durable transistors capable of enduring stringent conditions while delivering superior performance. Infineon is well-regarded for its high-quality and innovative products, particularly in areas requiring high reliability and precision, such as automotive systems, industrial automation, and energy management.

Where to Find JANTX2N6796 by Infineon Technologies AG

To procure the JANTX2N6796, it is advisable to check findchips.com. This website can be utilized to verify current availability and pricing from numerous distributors. Historically, the part has been available from distributors such as Chip1Stop and Future Electronics, but availability can fluctuate. For professionals looking to explore alternatives or possibly related transistors, the Power Field-Effect Transistors section on findchips.com can prove beneficial in offering various options from Infineon Technologies AG or other renowned manufacturers.

Compare pricing for JANTX2N6796 and other Power Field-Effect Transistors / Transistors at findchips.com