Overview of MRF6S20010GNR1 by NXP Semiconductors
The MRF6S20010GNR1 is an RF power MOSFET from NXP Semiconductors designed for a broad range of applications from 1600 to 2200 MHz. It is characterized as a single, lateral N-Channel RF power MOSFET, operating within the S band. Typical specifications for this part include an output power of 10 W and a supply voltage of 28 V. This component is encapsulated in a plastic, TO-270BA package with a gull wing form factor, suitable for surface mount technology.
This RF power transistor is developed using metal-oxide semiconductor (MOS) technology, enhancing its performance in RF amplification roles. MOSFETs like the MRF6S20010GNR1 are known for their high efficiency and good thermal performance, thanks to features such as enhancement mode operation and a junction temperature cap of 225°C. The MOSFET’s package description highlights its compliance with RoHS, although it is not Reach compliant and is indicated with an ECCN code of EAR99.
With a breakdown voltage- minimum of 68 V and capable of handling a peak reflow temperature of 260°C for up to 40 seconds, this MOSFET is built for durability and reliability in challenging environments. Its performance is further supported by a factory lead time of 4 weeks as of the current writing, making it a viable option for projects with medium to short lead times.
Industry Applications for MRF6S20010GNR1
RF Power Field-Effect Transistors like the MRF6S20010GNR1 are pivotal in numerous technologies and are instrumental in a wide range of industry applications. These applications leverage the RF, thermal, and electronic characteristics of the MOSFET to enhance their systems.
- Telecommunications: This component could potentially be implemented in RF amplification within cellular base station modules, supporting bands such as GSM/EDGE and W-CDMA, enhancing signal propagation and reliability.
- Consumer Electronics: In consumer electronics, devices such as high-frequency RF transceivers which need effective signal amplification might incorporate this type of MOSFET to ensure efficient and reliable performance.
- Aerospace and Defense: Given the component’s capability to operate effectively at high frequencies typically used in radar and satellite communications, it could potentially be utilized in these applications.
- Industrial Automation: With its robust operating temperature range and high breakdown voltage, this MOSFET could potentially be useful in industrial RF applications, including wireless factory automation systems.
Note that these potential industry applications are only conceptual/illustrative and require thorough analysis and verification by engineering and design teams to adhere to industry standards and specific application requirements.
About NXP Semiconductors
NXP Semiconductors is a prominent semiconductor manufacturer, known for its extensive range of products including but not limited to RF Power Field-Effect Transistors. The company provides innovative solutions for a variety of applications across many sectors. NXP excels in producing components that meet high standards of reliability and performance, with the MRF6S20010GNR1 being a notable example from their RF power MOSFET lineup. NXP is dedicated to advancing technological capabilities with a focus on meeting the rigorous demands of the ever-evolving electronics industry.
Where to Find MRF6S20010GNR1 by NXP Semiconductors
To find and purchase the MRF6S20010GNR1, or to search for alternate parts like other RF Power Field-Effect Transistors, use findchips.com. This site consolidates inventory from various distributors to help you compare pricing and availability efficiently. Historically, this part has been available from distributors such as Richardson RFPD, Rochester Electronics, Avnet Americas, DigiKey, and Newark. However, for the most current stock levels and pricing, you should consult the listings on findchips.com directly.