MT47H128M16RT-25E:C by Micron Technology Inc

Overview of MT47H128M16RT-25E:C by Micron Technology Inc.

The MT47H128M16RT-25E:C is a high-speed Double Data Rate 2 (DDR2) Dynamic Random Access Memory (DRAM) designed by Micron Technology Inc. This component boasts a significant storage capacity of 2 Gbit, structured as 128M x 16 bits, facilitating robust data processing capabilities for a wide array of electronic systems. With an access time maximum of 0.4 ns and support for multi-bank page burst access mode, it enables rapid retrieval and storage of data, ensuring efficient performance for applications requiring high-speed memory transactions.

Designed for synchronous operating modes, the MT47H128M16RT-25E:C operates on a nominal supply voltage of 1.8V, characterizing it as an energy-efficient choice for modern electronic designs. This memory module features an operating temperature range from 0 to 85°C, making it versatile for use in a wide range of environmental conditions. It’s encased in a Plastic Ball Grid Array (PBGA) with dimensions of 9 x 12.5 mm and an 84-pin configuration, complying with lead-free and RoHS standards which signifies its commitment to environmental sustainability.

Additional features such as auto/self-refresh and support for sequential and interleaved burst lengths of 4 and 8, further enhance its performance capabilities. With a peak reflow temperature of 260°C, it aligns with today’s high-density memory assembly requirements. The MT47H128M16RT-25E:C, thus, stands as a testament to Micron Technology Inc.’s dedication to delivering high-quality, reliable memory solutions.

Industry Applications for MT47H128M16RT-25E:C

The versatility and high-speed operation of the MT47H128M16RT-25E:C positions it as a critical component across various industries. However, these potential industry applications are conceptual/illustrative and necessitate thorough analysis and verification by engineering and design teams to ensure compliance with industry standards and specific application requirements. Here are a few sectors that might benefit:

  • Computing and Data Storage: Given its high-density memory configuration, the MT47H128M16RT-25E:C could potentially be integrated into servers and high-performance computing systems. Its synchronous operation and fast access time make it suitable for demanding processing environments where rapid data retrieval and storage are crucial. Similar parts might also be used in RAID systems and network-attached storage (NAS) devices.
  • Consumer Electronics: Devices such as gaming consoles, high-definition television sets, and digital cameras might leverage the memory’s efficiency and speed. The component’s high data bandwidth and low power consumption characteristics could possibly enhance the performance of multimedia applications and provide smoother user experiences.
  • Telecommunications: In the telecom industry, the MT47H128M16RT-25E:C might find applications within the infrastructure, including routers, switches, and base stations. Its ability to support high clock frequencies up to 400 MHz could potentially accommodate the rapid data throughput required in these devices.
  • Aerospace and Defense: Although the part itself is not qualified by military specifications, similar memory components with enhancements for durability and performance under extreme conditions could possibly be used in avionics systems, satellite communications, and other defense-related applications, provided they meet the specific industry standards.

This list is not exhaustive and represents a fraction of the potential applications for DRAM components like MT47H128M16RT-25E:C, emphasizing the importance of component selection in system design and performance.

About Micron Technology Inc.

Micron Technology Inc. is a leading global provider of innovative memory and storage solutions. In the arena of DRAMs, Micron has established a notable presence, manufacturing a wide array of memory modules designed to meet the diverse needs of the technology landscape. Micron’s products, including the MT47H128M16RT-25E:C, are critical in driving advancements in various sectors such as computing, consumer electronics, telecommunications, and automotive, among others.

With a commitment to technology leadership and global manufacturing excellence, Micron continues to push the boundaries of what’s possible in memory performance, efficiency, and reliability. Their state-of-the-art DRAMs are testament to a rich history of innovation and a relentless pursuit of high-quality memory solutions that empower technology across the globe.

Where to Find MT47H128M16RT-25E:C by Micron Technology Inc

For those looking to purchase the MT47H128M16RT-25E:C component, Findchips.com offers a seamless way to compare prices and check stock availability from leading distributors. Historically, this part has been available at distributors such as Win Source Electronics, New Advantage Corporation, Avnet Asia, and Mouser Electronics, among others. However, to get current stock levels and the best possible pricing, visiting Findchips.com is highly recommended. On the platform, users can also explore a broad spectrum of alternative DRAMs and memory solutions offered by Micron Technology Inc. or other manufacturers to find the perfect match for their application needs.

Compare pricing for MT47H128M16RT-25E:C and other DRAMs / Memory at findchips.com