SCT20N120H by STMicroelectronics

Overview of SCT20N120H by STMicroelectronics

The SCT20N120H by STMicroelectronics is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1200 V and a continuous drain current (ID) of 20 A. Its typical on-resistance (RDS(on)) is 189 mOhm at a junction temperature (Tj) of 150°C. This component is packaged in an HiP247 package, which is designed for high power applications demanding high efficiency and reliability. The SCT20N120H belongs to the subcategory of Power Field-Effect Transistors.

This power MOSFET leverages the robustness of silicon carbide, providing higher reliability and performance under harsh conditions, such as high temperatures and switching frequencies. It was introduced into the market on December 18, 2019, according to the part data attributes, and maintains a factory lead time of 45 weeks as of current writing.

The SCT20N120H complies with environmental standards, being Reach compliant and featuring a JESD-609 Code of ‘e3’, indicating it has a lead-free terminal finish. Its peak reflow temperature is 245°C, suitable for typical soldering processes. This MOSFET is particularly optimized for applications requiring high voltage and large current capabilities, contributing significantly to energy efficiency.

Industry Applications for SCT20N120H

The SCT20N120H could potentially be applied in various high-demand industries due to its solid performance characteristics, although specific suitability should be evaluated by engineering teams. Here are some industry applications where the SCT20N120H might be appropriate:

  • Industrial Automation: In sectors requiring robust power management for motor drives and control systems, the SCT20N120H could enhance efficiency and reliability due to its superior thermal and switching performance.
  • Consumer Electronics: For power supplies in devices requiring high energy efficiency, the SCT20N120H might provide the necessary low loss and high voltage capacity.
  • Transportation and Logistics: Electric vehicles (EVs) which require efficient power conversion systems could benefit from the high voltage and current capabilities of this MOSFET, though integration into automotive systems generally demands additional compliance verification.
  • Renewable Energy Systems: High-efficiency inverters for solar energy systems might employ the SCT20N120H, taking advantage of its high voltage endurance and efficiency in power conversion.

Note: These potential industry applications are conceptual and illustrative; they require thorough analysis by design teams to ensure compatibility with specific needs and adherence to industry standards.

About STMicroelectronics

STMicroelectronics is widely recognized in the semiconductor industry, offering a broad spectrum of electronic components, including transistors and specially Power Field-Effect Transistors. The company focuses on incorporating innovative technologies such as silicon carbide in its products like the SCT20N120H, enhancing overall device performance and efficiency. STMicroelectronics is committed to maintaining high quality and reliability, adhering to stringent environmental standards across its product line, which makes them a trusted choice for high-performance applications in diverse industries.

Where to Find SCT20N120H by STMicroelectronics

To procure the SCT20N120H, consider using findchips.com to compare availability and pricing across different distributors. Historically, this part has been available at distributors such as EBV Elektronik, Avnet Silica, TME, Future Electronics, STMicroelectronics, Arrow Electronics, Mouser Electronics, Avnet Americas, DigiKey, and Newark. However, for current stock levels and best pricing options, check the updated listings directly on findchips.com. Additionally, for related Power Field-Effect Transistors, the link here can be used to explore alternate options by STMicroelectronics or other manufacturers.

Compare pricing for SCT20N120H and other Power Field-Effect Transistors / Transistors at findchips.com