SIR662DP-T1-GE3 by Vishay Intertechnologies

Overview of SIR662DP-T1-GE3 by Vishay Intertechnologies

The SIR662DP-T1-GE3 is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching and amplifier applications. It features a drain current of 60 Amps, a drain-source breakdown voltage of 60 volts, and a low on-resistance of only 0.0048 ohms, making it highly efficient in high power and high-speed switching applications. The device is encapsulated in a PowerPAK SOP-8 package, which is both halogen-free and RoHS compliant, supporting environmentally sensitive applications.

In addition to its basic electrical characteristics, the SIR662DP-T1-GE3 includes a built-in diode and operates in enhancement mode. Its maximum operating temperature can reach up to 150°C, with a maximum power dissipation of 104 Watts, indicating its robustness for demanding environments. The transistor is rated at a moisture sensitivity level of 1, suggesting high reliability regarding humidity sensitivity. Overall, these features make the SIR662DP-T1-GE3 suitable for a variety of power control and conversion applications in several demanding industries.

Industry Applications for SIR662DP-T1-GE3

Given the characteristics of the SIR662DP-T1-GE3, it could potentially be suitable for several industry applications where high power switching and efficiency are critical. However, these potential industry applications are only conceptual/illustrative and require analysis and verification by engineering and design teams for adherence to industry standards and specific application requirements:

  • Consumer Electronics: Devices such as power supplies for consumer electronics, potentially in its power management modules or DC-DC converters, could leverage the switching capabilities and low power dissipation offered by this MOSFET.
  • Computing and Data Storage: High-performance computing systems and servers which require efficient power management systems might benefit from the high drain current and low on-resistance of this MOSFET, helping in minimizing waste heat and improving overall system efficiency.
  • Aerospace and Defense: While the specific military specifications (Mil-Spec) standards are not mentioned, general aerospace and defense applications requiring robust performance under high temperatures might find this MOSFET beneficial in power regulation circuits and protective switching roles.
  • Industrial Automation: Due to its high power switchability and low on resistance, this MOSFET could potentially serve in automated machinery and robotics, particularly in motor control circuits, where high efficiency and reliability are necessary.

About Vishay Intertechnologies

Vishay Intertechnologies is a key player in the semiconductor industry, particularly known for its broad range of components including resistors, capacitors, and notably, transistors like the SIR662DP-T1-GE3. In the field of Power Field-Effect Transistors, Vishay offers an extensive array of products which are integral to power management and control systems across various industries. The company’s transistors are engineered to provide reliable performance under demanding conditions, making Vishay a preferred supplier in high-power and high-performance markets.

Where to Find SIR662DP-T1-GE3 by Vishay Intertechnologies

To procure the SIR662DP-T1-GE3, it’s recommended to research on findchips.com. In the platform, you can seek Power Field-Effect Transistors to find alternative parts that may also be suitable. Historically, distributors such as Avnet Asia, TTI, and Mouser Electronics have carried this part. However, availability fluctuates, and checking current stock levels and pricing through FindChips provides the most up-to-date information.

Compare pricing for SIR662DP-T1-GE3 and other Power Field-Effect Transistors at findchips.com