Overview of BSG0811NDATMA1 by Infineon Technologies AG The BSG0811NDATMA1 is a Power Field-Effect Transistor designed to meet the ever-increasing demands…
Transistors
BFR380FH6327XTSA1 by Infineon Technologies AG
Overview of BFR380FH6327XTSA1 by Infineon Technologies AG The BFR380FH6327XTSA1 by Infineon Technologies AG is a Radio Frequency (RF) Small Signal…
2SC3856 by Sanken Electric Co Ltd
Overview of 2SC3856 by Sanken Electric Co Ltd. The 2SC3856 by Sanken Electric Co Ltd. is a Power Bipolar Transistor…
BSZ130N03MSGATMA1 by Infineon Technologies AG
Overview of BSZ130N03MSGATMA1 by Infineon Technologies AG The BSZ130N03MSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor designed for…
DMP45H4D9HK3-13 by Diodes Incorporated
Overview of DMP45H4D9HK3-13 by Diodes Incorporated The DMP45H4D9HK3-13 is a P-Channel MOSFET characterized by a drain-source breakdown voltage of 450…
FDN5618P by onsemi
Overview of FDN5618P by onsemi The FDN5618P is a 60V P-Channel PowerTrench® MOSFET characterized by a drain current of -1.25A,…