Overview of RN1902FE,LF(CT by Toshiba America Electronic Components The RN1902FE,LF(CT by Toshiba is a digital bipolar junction transistor (BJT) featuring…
Transistors
MW6S010GNR1 by NXP Semiconductors
Overview of MW6S010GNR1 by NXP Semiconductors The MW6S010GNR1 by NXP Semiconductors is a Radio Frequency (RF) Power Metal-Oxide Semiconductor Field-Effect…
MRF448 by MACOM
Overview of MRF448 by MACOM The MRF448 is an RF Power Bipolar Transistor fabricated from silicon and operates as an…
IRFP3306PBF by Infineon Technologies AG
Overview of IRFP3306PBF by Infineon Technologies AG The IRFP3306PBF is a high-performance N-channel MOSFET designed for efficient power management and…
FQD4P40TM by onsemi
Overview of FQD4P40TM by onsemi The FQD4P40TM is a P-channel Power MOSFET that operates at -400 V and -2.7 A,…
IRF6717MTRPBF by Infineon Technologies AG
Overview of IRF6717MTRPBF by Infineon Technologies AG The IRF6717MTRPBF is a powerful N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for…