Overview of IGB50N65S5ATMA1 by Infineon Technologies AG The IGB50N65S5ATMA1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency…
Transistors
2N7002,215 by Nexperia
Overview of 2N7002,215 by Nexperia The Nexperia 2N7002,215 is a 60 V, 300 mA N-channel Trench MOSFET encapsulated in a…
MMBT5551-7-F by Diodes Incorporated
Overview of MMBT5551-7-F by Diodes Incorporated The MMBT5551-7-F by Diodes Incorporated is a small signal bipolar transistor designed for high-voltage…
2N7002P,215 by Nexperia
Overview of 2N7002P,215 by Nexperia The 2N7002P,215 by Nexperia is a 60 V, 360 mA N-channel Trench MOSFET encapsulated in…
IXTA1N170DHV by Littelfuse Inc
Overview of IXTA1N170DHV by Littelfuse Inc. The IXTA1N170DHV by Littelfuse Inc. is a Power Field-Effect Transistor specifically designed as an…
IXTH10P60 by Littelfuse Inc
Overview of IXTH10P60 by Littelfuse Inc. The IXTH10P60 is a P-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed specifically for high…