Overview of BCP56-16 by STMicroelectronics The BCP56-16 described as a low power NPN transistor specifications include a maximum collector-emitter voltage…
Transistors
SI4143DY-T1-GE3 by Vishay Intertechnologies
Overview of SI4143DY-T1-GE3 by Vishay Intertechnologies The SI4143DY-T1-GE3 is classified as a power field-effect transistor, specifically a P-channel MOSFET. It…
BC857B,215 by Nexperia
Overview of BC857B,215 by Nexperia The BC857B,215 is a PNP general-purpose transistor described as part of the Small Signal Bipolar…
SIR680ADP-T1-RE3 by Vishay Intertechnologies
Overview of SIR680ADP-T1-RE3 by Vishay Intertechnologies Designed for high efficiency and power density, the SIR680ADP-T1-RE3 is an N-Channel 80-V (D-S)…
SI4401FDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4401FDY-T1-GE3 by Vishay Intertechnologies The SI4401FDY-T1-GE3 is a P-channel MOSFET characterized by a -40V drain-source breakdown voltage and…
AFT05MS004NT1 by NXP Semiconductors
Overview of AFT05MS004NT1 by NXP Semiconductors The AFT05MS004NT1 is an RF Power Field Effect Transistor (FET) designed for RF energy…