Overview of FMMT558TA by Diodes Incorporated The FMMT558TA is a small signal bipolar transistor characterized by its PNP polarity, 0.15A…
Transistors
CM900HG-130X by Mitsubishi Electric
Overview of CM900HG-130X by Mitsubishi Electric The CM900HG-130X is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi…
BSC098N10NS5ATMA1 by Infineon Technologies AG
Overview of BSC098N10NS5ATMA1 by Infineon Technologies AG The BSC098N10NS5ATMA1 is a high-performance Power Field-Effect Transistor (FET) designed by Infineon Technologies…
2N7002Q-7-F by Diodes Incorporated
Overview of 2N7002Q-7-F by Diodes Incorporated The 2N7002Q-7-F by Diodes Incorporated is a small-signal field-effect transistor (FET) that is designed…
IKP20N60TXKSA1 by Infineon Technologies AG
Overview of IKP20N60TXKSA1 by Infineon Technologies AG The IKP20N60TXKSA1 is part of the IGBTs subcategory, designed by Infineon Technologies AG…
IXFH18N90P by IXYS Corporation
Overview of IXFH18N90P by IXYS Corporation. The IXFH18N90P is a high-performance Power Field-Effect Transistor (FET) designed for switching applications requiring…