Overview of TGF2023-2-02 by Qorvo
The TGF2023-2-02 is a Radio Frequency (RF) Power Field-Effect Transistor (FET) specifically optimized for applications ranging up to 18 GHz. With a power output of 12 watts, this discrete power gallium nitride (GaN) on silicon field-effect transistor is highly efficient, boasting a power-added efficiency (PAE) of 73.3% and a gain of 21 dB. Manufactured by Qorvo, the TGF2023-2-02 features a rectangular, unencased chip configuration with three terminals designed for high-frequency performance in challenging environments.
Adhering to RoHS and REACH compliance regulations, the device ensures a broad acceptance in various global markets concerning environmental and safety standards. The use of high electron mobility transistor (HEMT) technology enhances its performance in high-frequency bands, specifically in the Ku-band which covers the frequency spectrum from 12 to 18 GHz. This, coupled with its depletion mode operation and compact die packaging, makes it a versatile component within the RF Power Field-Effect Transistors subcategory.
Industry Applications for TGF2023-2-02
The TGF2023-2-02’s advanced features potentially make it an ideal choice for various high-demand applications. Here are several industries where this component might play a crucial role:
- Telecommunications: The device could be instrumental in RF power amplifiers that are crucial for base station use, offering the necessary high-frequency performance and efficiency.
- Space Technology: With its high frequency and power efficiency, the TGF2023-2-02 could be suitable for use in satellite communications equipment, where reliable, high-performance components are critical.
- Electronic Manufacturing: This transistor might be used in testing and measurement equipment utilized during the manufacture of RF components and systems, benefiting from its precision and efficiency in high-frequency operations.
- Aerospace and Defense: Due to its performance in high-frequency bands and efficiency, this part could potentially play a role in the development of radar and avionic systems, which require robust and effective RF components.
Note that these potential applications are purely illustrative and would need thorough verification and compliance checks by engineering teams to meet industry-specific standards.
About Qorvo
Qorvo is a leading provider in the RF solutions sector, known for its innovation in RF Power Field-Effect Transistors among other semiconductor technologies. Their components, like the TGF2023-2-02, are designed to push the limits of what is possible in terms of performance, efficiency, and size in RF applications. Qorvo continually invests in developing next-generation technologies to meet the broad and evolving needs of the tech industry, including both commercial and defense sectors. Products like the TGF2023-2-02 illustrate Qorvo’s commitment to leading the market in high-frequency, high-efficiency RF components.
Where to Find TGF2023-2-02 by Qorvo
To locate the TGF2023-2-02 for purchase or to find out more about its specifications and availability, one should visit findchips.com. This platform provides the latest stock levels and pricing from various distributors. While historically, this part has been available through distributors like Mouser Electronics and DigiKey, checking on FindChips will provide the current availability and best purchasing options. Furthermore, if you’re interested in exploring similar or alternative RF Power Field-Effect Transistors, FindChips offers a comprehensive listing of parts from Qorvo and other manufacturers.