Overview of TPN14006NH,L1Q(M by Toshiba America Electronic Components
The TPN14006NH,L1Q(M is a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) featuring an N-channel type. It supports a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 33A. Designed for surface mounting, this transistor incorporates an Rds(On) test voltage of 10V and a gate source threshold voltage maximum of 4V. This component has 8 pins and is RoHS compliant, indicating adherence to hazardous material standards set by the European Union. It operates in enhancement mode and can handle a maximum operating temperature of 150 °C, with a maximum power dissipation of 30W.
Manufactured by Toshiba, the TPN14006NH,L1Q(M is classified as “Active” in its lifecycle, ensuring that the part is still in production and widely available for procurement. The component comes under the subcategory of Power Field-Effect Transistors, a crucial element in various electronic devices, offering optimal performance in power regulation applications.
Industry Applications for TPN14006NH,L1Q(M
The TPN14006NH,L1Q(M, with its robust characteristics, could potentially serve a variety of industrial applications. Here are some examples where this part might be ideally suitable, given its specifications and operational features:
- Consumer Electronics: Devices such as high-efficiency power supplies and LED drivers potentially use MOSFETs like the TPN14006NH,L1Q(M to manage power effectively. This transistor might be suited due to its high drain current and low power dissipation capabilities, enhancing the device’s overall energy efficiency and thermal management.
- Industrial Automation: For machinery and production lines that require reliable and efficient switching applications, a MOSFET such as TPN14006NH,L1Q(M could be a crucial component. Its capability to endure high temperatures and power levels would ensure durability and optimal operational performance.
- Computing and Data Storage: In server power supplies and data center energy management systems, managing heat and efficiency is vital. The TPN14006NH,L1Q(M, with its high operating temperature threshold and efficient power handling, would potentially be ideal for these applications.
- Telecommunications: Within power regulation modules in telecommunications equipment, where efficient power conversion is crucial, this MOSFET could help in boosting performance by enhancing power management capabilities.
- Electronic Manufacturing: As a basic yet powerful component, this MOSFET could also be used extensively in the manufacturing of various electronic devices, especially in testing stages where stable and reliable semiconductors are necessary.
These potential industry applications should be confirmed by engineering and design teams to ensure they meet the specific industry standards and requirements.
About Toshiba America Electronic Components
Toshiba America Electronic Components is recognized for its significant contribution to the field of semiconductor and storage products. Particularly in the realm of transistors, Toshiba develops Power Field-Effect Transistors like TPN14006NH,L1Q(M and similar parts, providing solutions that enhance the functionality and efficiency of various electronic devices. Toshiba’s offerings in this segment are known for their reliability, durability, and cutting-edge technology, aimed at advancing how power management and conversion are performed in electronic devices.
Where to Find TPN14006NH,L1Q(M by Toshiba America Electronic Components
To procure the TPN14006NH,L1Q(M, potential buyers should visit dedicated electronic component platforms like findchips.com. In addition to checking the availability and current pricing of this part, findchips.com provides insightful information about alternate parts in the Power Field-Effect Transistors range. Historically, distributors like EBV Elektronik, Chip1Stop, and Newark have stocked this particular component. However, for real-time data on stock levels and to explore other purchasing options, one should consult findchips.com directly.