UJ4C075018K4S by Qorvo

Overview of UJ4C075018K4S by Qorvo

The UJ4C075018K4S is an N-Channel Power Field-Effect Transistor, designed for high-performance applications. Its specifications include a maximum drain-source voltage (Vds) of 750V and a continuous drain current (Id) of 81A. This component features a TO-247-4 package, which is known for its robust and efficient thermal management capabilities. It comprises four pins, which allows for straightforward integration into various electronic circuits.

Another notable characteristic of the UJ4C075018K4S is its power dissipation capability, rated at 385W. This ensures effective performance under demanding conditions. The device is designed with a built-in diode and a Kelvin sensor, which contributes to its versatility in switching applications. Additionally, its operating temperature range spans from -55°C to +175°C, making it suitable for both extreme and moderate environments. The Rohs compliance indicates that this component meets environmental standards for restricted substances, a critical factor for many modern electronic applications.

The UJ4C075018K4S utilizes silicon carbide (SiC) technology, which enhances its performance and reliability compared to traditional silicon-based FETs. With an avalanche energy rating of 97.2 mJ and a drain-source on resistance maximum of 0.023 Ω at 12V test voltage, this part is engineered for efficiency. As of the current writing, the factory lead time for this component is approximately 44 weeks.

Industry Applications for UJ4C075018K4S

The UJ4C075018K4S could find potential applications across various industries, facilitated by its robust specifications and operational versatility. Here are a few example industries and their possible use cases:

• Industrial Automation: The UJ4C075018K4S might be suitable for use in industrial automation systems where efficient switching and high power handling are essential. Its performance characteristics could potentially benefit motor drives and automated machinery, promoting energy efficiency and reliability.
• Automotive: While automotive applications are largely governed by stringent standards, the capabilities of the UJ4C075018K4S could be leveraged in automotive power management systems, particularly in electric and hybrid vehicles. However, it’s crucial to verify compliance with standards such as AEC-Q100 or AEC-Q101 for reliability in such applications.
• Telecommunications: In telecommunications, power FETs like the UJ4C075018K4S could potentially be utilized in signal amplification and switching equipment. The transistor’s ability to handle high current and voltage levels may support applications in base stations and other infrastructure critical to communication systems.
• Robotics and Drones: This component might be applicable in robotics and drone technology, where efficient energy management and switching times are vital for performance. The characteristics of the UJ4C075018K4S could support battery management systems or power supplies in these advanced technologies.
• Consumer Electronics: Power management within consumer electronics, which increasingly require efficient energy use, is another area where the UJ4C075018K4S could potentially play a role. It could be utilized in devices that need robust switching capabilities to manage power consumption effectively.

These potential industry applications are only conceptual and illustrative. They require further analysis and verification by engineering and design teams to ensure adherence to industry standards and specific application requirements.

About Qorvo

Qorvo specializes in the development and manufacturing of advanced RF and power management solutions, including a wide range of transistors, such as the UJ4C075018K4S. Their focus on silicon carbide technology positions them as a significant player in the Power Field-Effect Transistors domain, providing components that meet the growing demands of various industries for efficiency and high performance. Alongside the UJ4C075018K4S, Qorvo offers several similar products that cater to diverse applications, reinforcing their commitment to innovation in the semiconductor space.

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