Overview of IRF6648TRPBF by Infineon Technologies AG
The IRF6648TRPBF is a high-performance Power Field-Effect Transistor featuring a drain current (I(D)) of 86A, a drain-source breakdown voltage of 60V, and an extremely low drain-source on-resistance of 0.007 ohms. It is designed in a N-channel configuration using silicon as the transistor element material. The package is a RoHS-compliant, isometric-3, encapsulating a metal-oxide semiconductor FET structure. This part is optimized for switching applications, offering low conduction losses and featuring an integrated diode within its single configuration.
The IRF6648TRPBF, manufactured by Infineon Technologies AG, also possesses excellent durability and efficiency with an operating temperature range from -40 °C to 150 °C. The avalanche energy rating (Eas) of 47 mJ, highlights its capacity for handling energy spikes. Infineon’s focus on reducing energy wastage is evident with features like low conduction loss and a high pulsed drain current (IDM) capability of up to 260 A. Additionally, at a moisture sensitivity level of 1, this component ensures high reliability and performance under varying environmental conditions. The lead time from the factory for this part is typically around 16 weeks, as of the current writing.
Industry Applications for IRF6648TRPBF
The properties of the IRF6648TRPBF suggest it could be potentially beneficial in a variety of industry applications, where high power and efficiency are critical. Please note, these applications are conceptual and require validation by engineering and design teams to ensure compliance with specific industry standards and application requirements.
- Energy and Power Systems: The high avalanche energy rating and low resistance could make the IRF6648TRPBF suitable for power regulation in renewable energy systems, such as solar inverters and wind turbines. These applications benefit from efficient power regulation and high reliability in harsh conditions.
- Medical Imaging: Given the need for precise power control and high reliability, this MOSFET could possibly be used in the power supply units of medical imaging equipment such as MRI and CT scanners, ensuring safety, reliability, and efficiency in sensitive medical operations.
- Robotics and Drones: In robotics and drones, where efficient power usage and minimal heat generation are critical, the low on-resistance and high drain current specifications could potentially enhance the performance of motor drives and power management systems.
Note, these potential applications are illustrative and must be examined further to ensure that they meet specific operational standards and safety requirements of the respective industries.
About Infineon Technologies AG
Infineon Technologies AG, the manufacturer of IRF6648TRPBF, is a leading player in the semiconductor industry, particularly well-known for its robust range of transistors including Power Field-Effect Transistors. They specialize in fabricating reliable, high-performance components that are widely used in various high-tech sectors. Infineon is renowned for its focus on innovation, sustainability, and developing technology that powers a wide array of electronics, emphasizing energy efficiency and high performance. The company’s portfolio includes a diverse range of semiconductor solutions including power management, microcontrollers, and security technology, among others.
Where to Find IRF6648TRPBF by Infineon Technologies AG
If you are considering purchasing the IRF6648TRPBF, it is recommended to research through our platform at findchips.com. Here, you can verify the availability and compare pricing from various distributors. Historically, this part has been stocked by distributors such as Win Source Electronics, New Advantage Corporation, Greenchips, and EBV Elektronik. To explore alternate parts and further details about Power Field-Effect Transistors offered by Infineon Technologies AG or other manufacturers, our site offers comprehensive resources and up-to-date information.