Overview of C2M1000170J by Cree, Inc.
The C2M1000170J is a silicon carbide N-Channel Metal-oxide Semiconductor FET, characterized by a drain current (I(D)) of 5.3A, a breakdown voltage of 1700V, and a drain-source on resistance of 1.4 ohms. Housed in a D2PAK-7 package, it includes features like a built-in diode and is operable in enhancement mode. This part is designed for high-efficiency applications requiring a high breakdown voltage and fast switching. It can operate over a broad temperature range from -55°C to 150°C, making it versatile for various demanding environments.
C2M1000170J is RoHS compliant, underlines its adherence to environmental safety standards in electronics manufacturing. However, it is noteworthy that this part is labelled as “End Of Life,” which indicates that it might be phased out or replaced in the near future. Additionally, it is worth noting that the device is not compliant with the REACH regulation. Introduced to the market on July 7, 2017, C2M1000170J incorporates robust FET technology and is mounted through a surface mount process.
Industry Applications for C2M1000170J
The C2M1000170J MOSFET is potentially suitable for several high voltage and power applications across various industries due to its efficient switching capabilities and high breakdown voltage. Here are some industries where this part could be conceptually applied:
- Renewable Energy Systems: The part’s high voltage tolerance and robust operation make it potentially suitable for inverter applications in solar energy systems. Its silicon carbide material is known for better thermal performance, which is crucial in the fluctuating environments of renewable energy applications.
- Industrial Automation: In control systems for manufacturing processes, these transistors might be used in high-voltage motor drives or power regulators, providing reliable operation under industrial conditions.
- Energy and Power Systems: Power distribution systems, which require components that can handle high voltages efficiently, might potentially integrate these FETs to manage power flow and enhance system reliability.
- Motor Control Systems: The ability to handle significant voltages and currents may allow this transistor to be used in motor controllers for electric vehicles or industrial machinery, contributing to enhanced performance and durability.
It should be noted that while the above applications outline potential uses, their actual application should be rigorously verified and tested by engineering teams to ensure compliance with specific industry standards and performance requirements. The proposed uses are illustrative and conceptual, depending on a thorough assessment of operating conditions and design constraints.
About Cree, Inc.
Cree, Inc. is a leader in the development of silicon carbide (SiC) and gallium nitride (GaN) materials and associated technologies. Specializing notably in the field of Power Field-Effect Transistors and broader transistor technologies, Cree’s products stand out for their efficiency, durability, and performance in demanding applications. The C2M1000170J is an example of Cree’s commitment to pushing the boundaries of power handling and efficiency. Cree’s products frequently cater to markets that require robust semiconductor components that can perform under stringent conditions.
Where to Find C2M1000170J by Cree, Inc.
If you are considering the purchase of the C2M1000170J MOSFET for your application, the best place to research and buy this part is on findchips.com. Here, you can also seek out alternative Power Field-Effect Transistors, which might be offered by Cree, Inc. or other reputable manufacturers.
Historically, this part has appeared in lists from distributors like ComSIT USA, although stock levels and availability vary continuously. As such, visiting findchips.com will provide the most current stock levels, pricing, and availability from a multitude of distributors.