IAUT200N08S5N023ATMA1 by Infineon Technologies AG

Overview of IAUT200N08S5N023ATMA1 by Infineon Technologies AG

The IAUT200N08S5N023ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies AG, designed for optimal efficiency and power control within electronic circuits. This component functions as an enhancement mode transistor in a small outline HSOF package with a built-in diode. Rated for 80V and capable of handling a continuous drain current up to 200A, this Power Field-Effect Transistor features a low drain-source on-resistance of just 0.0023 Ω, maximizing its effectiveness in high current applications.

Constructed using metal-oxide semiconductor technology, the IAUT200N08S5N023ATMA1 ensures robust performance with a maximum operating temperature range from -55 °C to 175 °C. This range, coupled with an avalanche energy rating of 330 mJ, makes it highly suitable for demanding environments. Additional technical specifications include a drain-source breakdown voltage minimum of 80V and a pulsed drain current maximum of 800A, which collectively highlight its capability to handle high transients and pulsatile loads.

One distinctive attribute of this MOSFET is its AEC-Q101 qualification, indicating its reliability in automotive applications. The component also meets various compliance codes like ROHS, REACH, and EAR99 which makes it suitable for a global market. The part operates effectively under extreme environmental conditions, as evidenced by its moisture sensitivity level of 1, indicating its resilience against moisture-induced damage during soldering.

Notably, this transistor is surfaced mounted, indicative of simplified integration for contemporary PCB technology. Bearing this in mind, coupled with its high power density, IAUT200N08S5N023ATMA1 offers an efficient solution for applications requiring high switching frequencies alongside low on-resistances.

Industry Applications for IAUT200N08S5N023ATMA1

  • Automotive: Its ability to handle high temperatures and the mechanical robustness required in fluctuating conditions, coupled with the AEC-Q101 standard, renders the IAUT200N08S5N023ATMA1 potentially suitable for various automotive subsystems. Possible applications include electric vehicle (EV) power management systems, where high efficiency and reliability are paramount.
  • Industrial Automation: This component might be ideally deployed within industrial control systems. For areas like robot controllers or high-speed actuators, where precision and the ability to sustain over varying load conditions are necessary, the high current tolerance and thermal properties of IAUT200N08S5N023ATMA1 could prove beneficial.
  • Telecommunications: In power regulation systems for telecommunications infrastructure, the functionality to manage significant pulsed currents could suit applications, especially in RF amplifiers where instantaneous power supply is crucial.
  • Renewable Energy Systems: The MOSFET can potentially be integrated into inverters or converters used in photovoltaic systems. Its high avalanche energy rating and proven thermal performance would assist in managing the intermittent nature of solar power generation effectively.

Please note, these potential industry applications are illustrative and require thorough analysis and verification by engineering and design teams for adherence to specific standards and application needs.

About Infineon Technologies AG

Infineon Technologies AG is a leading innovator in the semiconductor industry, particularly noted for its strides in the Power Field-Effect Transistors sector. The company consistently works towards advancements in transistor technology, ensuring robust, high-performing components across various applications. With a broad portfolio that includes products like IAUT200N08S5N023ATMA1, Infineon is committed to delivering solutions that enhance energy efficiency, mobility, and security in an increasingly digital world. Their products typically integrate state-of-the-art technology tailored to meet stringent requirements, something particularly evident in their robust designs and choice of material that contribute to longevity and reliability in demanding environments.

Where to Find IAUT200N08S5N023ATMA1 by Infineon Technologies AG

For those considering the procurement of IAUT200N08S5N023ATMA1, it is advisable to perform thorough market research to ascertain current availability and pricing. Historically, distributors like DigiKey, Mouser Electronics, and Arrow Electronics have stocked this component. However, to access real-time data on stock levels and competitive pricing, visiting Findchips.com is recommended. On this platform, one can not only view the availability of IAUT200N08S5N023ATMA1 but also explore other Power Field-Effect Transistors from Infineon Technologies AG or different manufacturers which may offer comparable specifications.

Compare pricing for IAUT200N08S5N023ATMA1 and other Power Field-Effect Transistors / Transistors at findchips.com