Overview of IPW80R360P7XKSA1 by Infineon Technologies AG
The IPW80R360P7XKSA1 is a high-voltage, power MOSFET designed using Infineon Technologies AG’s advanced silicon technology, encapsulated in a TO-247 package. This N-channel metal-oxide semiconductor field-effect transistor (MOSFET) supports up to 800V drain-source voltage and offers a continuous drain current of 13A and a low on-resistance of 0.36Ω. Additionally, it features a built-in diode for enhanced performance in switching applications.
Key characteristics that define this Power Field-Effect Transistor include a high avalanche energy rating of 34 mJ, making it suitable for robust applications that require high energy absorption capability. The transistor operates in enhancement mode, with a threshold voltage of 3V, making it well-suited for various high-voltage switching applications.
Importantly, the IPW80R360P7XKSA1 is RoHS compliant and reaches compliance, ensuring its suitability for use in various global markets concerned with environmental compliance. As of the current writing, this part has a factory lead time of 17 weeks, indicating a lead time potential buyers should be aware of when planning procurement.
Industry Applications for IPW80R360P7XKSA1
The robust characteristics of the IPW80R360P7XKSA1 potentially cater to various industry applications. These are conceptual illustrations that require thorough validation by engineering and design teams to ensure compliance with specific industry standards and application requirements:
- Industrial Automation: The IPW80R360P7XKSA1 could potentially be used for controlling high-power industrial machinery. Its high drain-source voltage and continuous current rating might make it ideal for driving motors and actuators within automated manufacturing lines.
- Consumer Electronics: In consumer electronics, this transistor might be utilized in power supplies for large appliances, where efficiency and high voltage capabilities are critical.
- Renewable Energy Systems: With its high avalanche energy rating and robust switching capabilities, this MOSFET could potentially be suitable for applications in solar inverters or wind turbine converters, contributing to efficient energy conversion and management.
- Telecommunications: This device might also find use in the power management systems of telecommunications infrastructure, where reliability under high voltages is necessary for long-term operations.
These applications are indicative and should be substantiated with detailed engineering analysis pertinent to the specific use case and compliance with relevant standards.
About Infineon Technologies AG
Infineon Technologies AG is a leader in the semiconductor industry, particularly noted for its innovative approaches in the development of Power Field-Effect Transistors and general transistor technology. This technological prowess extends to a wide array of products, including IPW80R360P7XKSA1, designed to offer reliable performance in demanding applications across all sectors.
The company’s commitment to technological advancement is mirrored in its broad portfolio, which includes various semiconductor solutions optimized for energy efficiency, mobility, and security applications across multiple sectors. Infineon’s dedication to quality and its capacity to meet evolving industry demands makes it a prominent name in semiconductor manufacturing.
Where to Find IPW80R360P7XKSA1 by Infineon Technologies AG
To purchase the IPW80R360P7XKSA1, it is recommended to utilize our website, findchips.com, where current stock levels and pricing information from various distributors can be easily accessed. Previously, distributors such as Mouser Electronics, DigiKey, and Future Electronics have stocked this part, but it is always best to check for the most current availability and competitive pricing.
For alternatives to the IPW80R360P7XKSA1, you may also explore other Power Field-Effect Transistors offered by Infineon Technologies AG or other manufacturers, directly through the provided link.