Overview of MT41K128M16JT-107:K by Micron Technology Inc.
The MT41K128M16JT-107:K is a DDR3L DRAM with a configuration of 128Mx16, making it a component with a total density of 2Gbit. This integrated circuit features an access time of 0.195 nanoseconds and encapsulated in a 96-ball Fine-Pitch Ball Grid Array (FBGA) package that measures 8 x 14 mm with a height of 1.20 mm. It operates with a nominal voltage of 1.35V but can also operate at 1.5V, providing flexibility in power management. This low voltage and power-efficient memory component is Lead-free and compliant with RoHS and REACH, making it suitable for global use.
The device offers several advanced functionalities including auto/self-refresh for reduced power consumption and sustaining performance. It is designed for multi-bank page burst access, allowing for efficient handling of complex data streams and enhancing the overall system speed. With a maximum clock frequency of 933 MHz and an operating temperature up to 85°C, this DRAM provides robust performance suitable for high-speed computing applications. As per the current information, the factory lead time for this part is about 18 weeks and 4 days.
Industry Applications for MT41K128M16JT-107:K
The MT41K128M16JT-107:K due to its technical specifications, could potentially serve various industries, enhancing applications that require high memory bandwidth and energy efficiency. Please note that these applications are illustrative and would require precise validation:
- Consumer Electronics: Devices like high-performance gaming consoles, smart TVs, and advanced wearables could potentially utilize this DRAM for its high-speed data processing capabilities and low power operation. The high clock speeds would enhance user interfaces and gaming experiences by decreasing load times.
- Computing and Data Storage: Server farms and cloud storage operations, which require large amounts of fast and reliable memory, could find the energy efficiency and high-density memory beneficial, potentially reducing operational costs while maintaining speed.
- Telecommunications: Network equipment such as routers and switches that require buffer and cache memory might use this high-performance DRAM to manage large amounts of data more efficiently, thereby improving bandwidth handling and decreasing latency in network operations.
- Smart Cities: Infrastructure technologies, including traffic management systems and sensor networks for environmental monitoring, might incorporate this DRAM to process real-time data crucial for decision-making and city management.
It is important to mention that these potential industry applications are only conceptual and must be thoroughly analyzed and verified by engineering and design teams to ensure compliance with industry standards and specific application requirements.
About Micron Technology Inc.
Micron Technology Inc. is well-known for its high-quality, high-performance DRAMs. Alongside the MT41K128M16JT-107:K, they produce a broad range of memory solutions that cater to many different technology sectors, blending innovation with performance and reliability. Micron focuses on high-efficiency iterative improvements and has been pivotal in the development of the memory technology industry. Their products are integral in pushing forward the limits of what modern electronics technology can achieve.
Where to Find MT41K128M16JT-107:K by Micron Technology Inc
To find MT41K128M16JT-107:K and explore other DRAMs, one should visit findchips.com. This part has historically been available at distributors such as Win Source Electronics, New Advantage Corporation, and DigiKey. For current stock levels and pricing, please refer directly to findchips.com. Exploring alternative parts can also provide comparable options and might be useful depending on stock availability and project requirements.