Overview of NVMJS2D5N06CLTWG by onsemi
Onsemi’s NVMJS2D5N06CLTWG is a state-of-the-art N-Channel Power Field-Effect Transistor (FET) designed for high-efficiency and high-density power applications. This part boasts several outstanding features, such as a minimal drain-source on resistance of 0.0033 Ω and a high drain current maximum of 164 A, which make it exceptionally suitable for heavy-duty operations. Its FET technology is structured on metal-oxide semiconductor principles, providing a reliable and efficient performance.
The component is designed with a single with built-in diode configuration, encapsulated within a plastic/epoxy package material that guarantees durability under various environmental conditions. Its efficient design is complemented by an integrated avalanche energy rating of 565 mJ, ensuring protection against sudden energy spikes. With an operating temperature range of -55 °C to 175 °C and a moisture sensitivity level of 1, the NVMJS2D5N06CLTWG is crafted to withstand extreme conditions, affirming its utility across a wide range of applications. It is noteworthy that this part is currently active, with a factory lead time of 65 weeks at the time of this writing, emphasizing the need for strategic planning in procurement processes.
Industry Applications for NVMJS2D5N06CLTWG
The versatile features of the NVMJS2D5N06CLTWG make it suitable for a broad array of industry applications. Its robust design can cater to demands from sectors including:
- Automotive: This component may be suitable for electric vehicle (EV) power management systems, considering its high drain current capacity and efficiency in power conversion.
- Industrial Automation: With its high power dissipation capability and resilience at extreme temperatures, it could effectively serve in motor control and power supply units within automated manufacturing lines.
- Renewable Energy: Its capability to handle significant power loads and operate efficiently makes it a potential choice for inverters in solar energy systems and wind turbines.
- Consumer Electronics: The FET’s small footprint and high efficiency may be ideal for compact, high-performance power management circuits in devices like laptops and smartphones.
Given the device’s resistance to moisture and a wide operating temperature range, it could also see applications in outdoor IoT applications and in technologies pushing the envelope of traditional tech boundaries, such as augmented reality and smart city infrastructure.
About onsemi
Onsemi stands as a leader in the semiconductor industry, especially renowned for its Power Field-Effect Transistors among a broader portfolio of transistor technologies. It commits to driving energy-efficient innovations, with the NVMJS2D5N06CLTWG serving as a prime example of its dedication to producing components that decrease power consumption and increase reliability for a sustainable future. Onsemi’s parts, including similar products to the NVMJS2D5N06CLTWG, adhere to rigorous quality and performance standards, ensuring they meet the diverse needs of modern electronic and electrical applications.
Where to Find NVMJS2D5N06CLTWG by onsemi
Procuring the NVMJS2D5N06CLTWG by onsemi is made straightforward through platforms like FindChips.com. Here, individuals can compare real-time stock levels from multiple distributors to secure the best deal. Historically, this part has been available from distributors such as Newark, DigiKey, Mouser Electronics, and Future Electronics. However, to access the most current availability and pricing information, potential buyers are recommended to utilize FindChips. For those seeking alternate parts, exploring the category of Power Field-Effect Transistors on FindChips provides additional options from onsemi and other manufacturers, ensuring that engineers and procurement specialists can find the exact specifications required for their projects.