Overview of SISA35DN-T1-GE3 by Vishay Intertechnologies
The SISA35DN-T1-GE3 is characterized as a P-channel MOSFET operating at a drain-source voltage of -30V, with a drain current of -16A, and is capable of handling power dissipation up to 24W at a maximum operating temperature of 150 degrees Celsius. This component is from the Power Field-Effect Transistors subcategory and stands out due to its built-in diode configuration. Furthermore, Vishay Intertechnologies has designed this MOSFET with a very low drain-source on-resistance of only 0.019 Ω, which benefits applications demanding high efficiency and low heat generation.
In terms of reliability and compliance, the SISA35DN-T1-GE3 is RoHS compliant and carries an ECCN Code of “EAR99”, indicating general market availability without significant export restrictions. Also noteworthy is the part’s factory lead time of 17 weeks as of the current writing, which may require consideration in project timelines.
Industry Applications for SISA35DN-T1-GE3
- Consumer Electronics: Given its ability to manage significant power and operate efficiently with a low-turn on and turn-off time (55 ns and 75 ns respectively), the SISA35DN-T1-GE3 could potentially be used in power management applications within high-performance consumer electronics, improving battery life and reducing heat in devices such as smartphones and tablets.
- Automotive: The high reliability and efficiency of the SISA35DN-T1-GE3 could make it suitable for automotive applications such as electric vehicle power management systems. The part’s robust thermal performance and high current handling capabilities would be advantageous in environments where durability and reliability are critical.
- Renewable Energy: MOSFETs like the SISA35DN-T1-GE3 could potentially be integrated into solar power inverters and wind turbine converters. The part’s high power efficiency and operational temperature range make it a conceivable choice for managing the flow and conversion of power in renewable energy systems where efficiency is paramount to system performance and energy savings.
- Robotics: In robot power systems or motor control circuits, the SISA35DN-T1-GE3 could potentially be utilized due to its high power handling capacity and its built-in diode configuration, which can protect other sensitive components from voltage spikes during motor operation.
It’s important to note that these potential industry applications are conceptual and require thorough analysis and verification by engineering and design teams to ensure adherence to specific standards and application requirements.
About Vishay Intertechnologies
Vishay Intertechnologies is an established manufacturer in the field of electronic components, particularly noted for its extensive range of transistors including Power Field-Effect Transistors. The SISA35DN-T1-GE3 is just one example of the comprehensive portfolio offered by Vishay, which is marked by its focus on producing components that are highly reliable, efficient, and suitable for a variety of demanding applications. Vishay’s commitment to quality is mirrored in their adoption of stringent manufacturing standards and their ability to consistently deliver products that meet the evolving demands of the technology sector.
Where to Find SISA35DN-T1-GE3 by Vishay Intertechnologies
For those looking to purchase the SISA35DN-T1-GE3, our site findchips.com is an excellent resource as it lists availability and pricing from various distributors. Although historically this part has been available from distributors such as LCSC, TME, Arrow Electronics, and Mouser Electronics, stock levels and pricing can fluctuate. By using the link to access information on Power Field-Effect Transistors, you can also find alternate parts offered by Vishay Intertechnologies or other manufacturers that could meet specific requirements.